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AP4226GM PDF预览

AP4226GM

更新时间: 2024-09-27 03:19:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 74K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4226GM 技术参数

生命周期:Contact Manufacturer零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):8.2 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP4226GM 数据手册

 浏览型号AP4226GM的Datasheet PDF文件第2页浏览型号AP4226GM的Datasheet PDF文件第3页浏览型号AP4226GM的Datasheet PDF文件第4页 
AP4226GM  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
30V  
18mΩ  
8.2A  
D2  
D2  
D1  
Simple Drive Requirement  
Dual N MOSFET Package  
D1  
G2  
S2  
G1  
SO-8  
S1  
Description  
D2  
S2  
D1  
S1  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G2  
G1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
± 20  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
8.2  
A
6.7  
A
30  
A
PD@TA=25℃  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
-55 to 150  
-55 to 150  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
201211031  

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