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AP2161A PDF预览

AP2161A

更新时间: 2023-12-06 20:09:34
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
18页 1280K
描述
1A Single Channel Current-Limited Power Switch

AP2161A 数据手册

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AP2161A/ AP2171A  
Electrical Characteristics (@TA = +25°C, VIN = +5V, unless otherwise specified.)  
Symbol  
VUVLO  
ISHDN  
IQ  
Parameter  
Test Conditions  
Min  
1.6  
Typ  
1.9  
0.5  
45  
Max  
2.5  
1
Unit  
V
Input UVLO  
RLOAD = 1kΩ  
Input Shutdown Current  
Input Quiescent Current  
Input Leakage Current  
Reverse Leakage Current  
uA  
µA  
µA  
µA  
Disabled, IOUT = 0  
Enabled, IOUT = 0  
70  
Disabled, OUT grounded  
1
ILEAK  
IREV  
1
Disabled, VIN = 0V, VOUT = 5V, IREV at VIN  
SOT25, MSOP-8EP, SO-8  
U-DFN2018-6  
95  
115  
110  
140  
140  
170  
TA = +25°C  
VIN = 5V,  
IOUT = 1A  
90  
-40°C TA +85°C  
TA = +25°C  
Switch On-Resistance  
mΩ  
RDS(ON)  
120  
VIN = 3.3V,  
IOUT = 1A  
-40°C TA +85°C  
Short-Circuit Current Limit  
Over-Load Current Limit  
Current Limiting Trigger Threshold  
EN Input Leakage  
1.2  
1.5  
A
ISHORT  
ILIMIT  
ITrig  
Enabled into short circuit, CL = 68µF  
VIN = 5V, VOUT = 4.6V, CL = 68µF, -40°C TA +85°C  
Output Current Slew rate (<100A/s) , CL=68µF  
VEN = 5V  
1.1  
1.9  
A
2.0  
1
A
µA  
ms  
ms  
ms  
ms  
ISINK  
Output Turn-On Delay Time  
Output Turn-On Rise Time  
Output Turn-Off Delay Time  
Output Turn-Off Fall Time  
0.05  
0.6  
1.5  
0.1  
tD(ON)  
tR  
tD(OFF)  
tF  
CL = 1µF, RLOAD = 10Ω  
CL = 1µF, RLOAD = 10Ω  
0.01  
0.05  
CL = 1µF, RLOAD = 10Ω  
CL = 1µF, RLOAD = 10Ω  
Fault Flag  
RFLG  
tBlank  
FLG Output FET On-Resistance  
FLG Blanking Time  
4
20  
7
40  
15  
IFLG = 10mA  
ms  
CIN = 10µF, CL = 68µF  
Over-Temperature Protection  
Thermal Shutdown Threshold  
140  
25  
°C  
TSHDN  
THYS  
Enabled, RLOAD = 1kΩ  
-
Thermal Shutdown Hysteresis  
°C  
SO-8 (Note 5)  
110  
60  
°C/W  
°C/W  
°C/W  
°C/W  
MSOP-8EP (Note 6)  
SOT25 (Note 7)  
U-DFN2018-6 (Note 8)  
Thermal Resistance Junction-to-  
Ambient  
θJA  
157  
70  
Notes:  
5. Test condition for SO-8: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.  
6. Test condition for MSOP-8EP: Device mounted on 2” x 2” FR-4 substrate PC board, 2oz copper, with minimum recommended pad on top layer and  
thermal vias to bottom layer ground plane.  
7. Test condition for SOT25: Device mounted on FR-4, 2oz copper, with minimum recommended pad layout.  
8. Test condition for U-DFN2018-6: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom  
layer 1.0”x1.4” ground plane.  
4 of 18  
www.diodes.com  
March 2015  
© Diodes Incorporated  
AP2161A/AP2171A  
Document number: DS37617 Rev. 1 - 2  

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