Datasheet > AOW11S60

AOW11S60

更新时间： 2024-09-26 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	282K
描述
600V 11A a MOS TM Power Transistor

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AOW11S60 数据手册

AOW11S60/AOWF11S60

600V 11A

MOS ^TMPower Transistor

General Description

Product Summary

V_DS@ T_j,max

I_DM

700V

45A

The AOW11S60 & AOWF11S60 have been fabricated

using the advanced αMOS^TMhigh voltage process that is

designed to deliver high levels of performance and

robustness in switching applications.

R_DS(ON),max

Q_g,typ

0.399Ω

11nC

2.7µJ

By providing low R_DS(on), Q_gand E_OSSalong with

guaranteed avalanche capability these parts can be

adopted quickly into new and existing offline power supply

designs.

E_oss@ 400V

100% UIS Tested

100% R_gTested

TO-262

TO-262F

Top View

Bottom View

Top View

Bottom View

AOW11S60

AOWF11S60

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

AOW11S60

AOWF11S60

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

±30

V_GS

T_C=25°C

11*

Continuous Drain

Current

I_D

T_C=100°C

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AR

Repetitive avalanche energy ^C

Single pulsed avalanche energy ^G

T_C=25°C

E_AR

E_AS

120

W/ ^oC

178

1.4

P_D

Power Dissipation ^B

Derate above 25^oC

0.22

100

MOSFET dv/dt ruggedness

dv/dt

V/ns

°C

Peak diode recovery dv/dt ^H

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds ^J

Thermal Characteristics

T_L

300

°C

Parameter

Symbol

AOW11S60

AOWF11S60

Units

Maximum Junction-to-Ambient ^A,D

R_θJA

°C/W

Maximum Case-to-sink ^A

R_θCS

R_θJC

0.5

0.7

°C/W

Maximum Junction-to-Case

4.5

* Drain current limited by maximum junction temperature.

Rev 3: Jan 2012

www.aosmd.com

Page 1 of 6

12 3 4 5 6

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