Datasheet > AON7430

AON7430

更新时间： 2025-07-31 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	159K
描述
30V N-Channel MOSFET

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AON7430 数据手册

AON7430

30V N-Channel MOSFET

General Description

Features

The AON7430 uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge.

This device is suitable for high side switch in SMPS and

general purpose applications.

_DS(V) = 30V

I_D= 34A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 12mΩ

_DS(ON)< 16mΩ

100% UIS Tested

100% R_gTested

DFN 3x3 EP

Top View

Bottom

Top View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

V_GS

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

Continuous Drain

Current ^A

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

T_C=100°C

I_D

I_DM

T_A=25°C

T_A=70°C

I_DSM

I_AR

10.2

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

3.1

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^B

Steady-State

4.5

5.4

R_θJC

www.aosmd.com

Page 1 of 6

Rev 3: Feb 2010

12 3 4 5 6

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