Datasheet > AN2635

AN2635

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		闪存
页数	文件大小	规格书
36页	149K
描述
On-Chip FLASH Programming Routines

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AN2635 数据手册

Variables Used in the Routines

ERARNGE

This routine is used to erase either a page (64 bytes) or the whole array of FLASH. It can be used when

the internal operating frequency (f ) is between 1.0 MHz and 8.4 MHz.

DELNUS

This routine can generate a specified delay based on the values of register X and accumulator (A) as

parameters. DELNUS is used in ERARNGE routine.

Variables Used in the Routines

The RDVRNGE, PRGRNGE, and ERARNGE routines require certain registers and/or RAM locations to

be initialized before calling the routines in the user software. Table 1 shows variables used in the routines

and their locations.

Table 1. Variables and Their Locations

Location

RAM – RAM+7

RAM+$8

Variable Name Size (Bytes)

Description

Reserved

CTRLBYT

Reserved for future use

Control byte setting erase size

CPU speed — the nearest integer of f (in MHz) × 4;

RAM+$9

CPUSPD

LADDR

for example, if f = 2.4576 MHz, CPUSPD = 10

RAM+$A,

RAM+$B

Last address of a 16-bit range

First location of DATA array;

DATA array size must match a programming or verifying range

RAM+$C

DATA

—

Varies

Registers H:X

Beginning address of a 16-bit range

RAM

In general, RAM in Table 1 indicates the RAM start address. See Table 2 for RAM start locations for

specific MCUs. For example, the RAM start address for the MC68HC908LB8 (and each MCU currently

in the table) is $80.

CTRLBYT

The control byte (CTRLBYT) is located at RAM address RAM+$8 and is used for the ERARNGE routine.

In the case of the MC68HC908LB8, the CTRLBYT is located at $88. Bit 6 in this location is used to specify

either MASS (1) or PAGE (0) erase. The other bits must be 0. If one or more of these bits (except bit 6)

is initialized with 1, the erase operation is not executed.

On-Chip FLASH Programming Routines, Rev. 4

Freescale Semiconductor

1 234 5 6 7...36

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