Datasheet > AMS9013

AMS9013

更新时间： 2024-01-13 15:38:34

品牌	Logo	应用领域
奥地利微 - AMS		晶体晶体管
页数	文件大小	规格书
2页	241K
描述
NPN Transistors

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中文翻译

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数据手册

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AMS9013 数据手册

SMD Type

TransistIoCrs

AMS9013

NPN Transistors

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Excellent hFE linearity

Collector Current :IC=0.5A

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

P^C

300

T^j

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^CBO

Testconditons

Min

Typ

Max

Unit

Collector - base breakdown voltage

Collector - emitter breakdown voltage

Emitter - base breakdown voltage

Collector cut - off current

Ic= 100

Ic= 0.1mA IB=0

IE=100 IC=0

IE=0

VCB=40 V , IE=0

0.1

400

Collector cut -off current

I^CEO

VCE=20V , IB=0

Emitter cut - off current

I^EBO

VEB= 5V , IC=0

V^CE=1V, IC= 50mA

V^CE=1V, IC=500mA

IC=500 mA, IB= 50mA

120

DC current gain

h^FE

Collector - emitter saturation voltage

Base - emitter saturation voltage

Transition frequency

V^CE(sat)

V^BE(sat)

f^T

0.6

1.2

VCE=6V, IC= 20mA,f=30MHz

150

MHz

hFE Classification

Marking

Rank

hFE

120 to 200

200 to 350

300 to 400

中文翻译

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