Datasheet > AMS9014

AMS9014

更新时间： 2024-01-31 16:37:21

品牌	Logo	应用领域
奥地利微 - AMS		晶体晶体管
页数	文件大小	规格书
2页	270K
描述
NPN Transistors

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中文翻译

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数据手册

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AMS9014 数据手册

AMS9014

NPN Transistors

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Excellent hFE linearity

Collector Current :IC=0.1A

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.1

P^C

0.2

T^j

150

Storage Temperature

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Ic=100uA, IE=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base Breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

Ic=1mA, IB=0

IE=100 A, IC=0

VCB=50V, IE=0

VEB=5V, IC=0

0.1

1000

0.5

Emitter cutoff current

DC current gain

VCE=5V, IC=1mA

200

150

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCE(sat) IC=100mA, IB=10mA

VBE(sat) IC=100mA, IB=10mA

VCE=5V, IC=10mA,f=30MHZ

MHz

hFE Classification

Marking

Rank

hFE

200 to 450

450 to 1000

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