Datasheet > AMS73CAG02408RALJH8E

AMS73CAG02408RALJH8E

更新时间： 2022-10-09 17:13:05

品牌	Logo	应用领域
奥地利微 - AMS		动态存储器双倍数据速率
页数	文件大小	规格书
31页	683K
描述
HIGH PERFORMANCE 1Gbit DDR3 SDRAM

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AMS73CAG02408RALJH8E 数据手册

AMS73CAG01808RA

Type

Function

TDQS, TDQS

Output

Termination Data Strobe: When enabled via Mode Register A11=1 in MR1, DRAM will enable the

same termination resistance function on TDQS/TDQS that is applied to DQS/DQS. When disabled via

mode register A11=0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used.

VDDQ

VSSQ

VDD

No Connect: No internal electrical connection is present.

DQ power supply: 1.5V +/- 0.075V

DQ Ground

Supply

Power Supply: 1.5V +/- 0.075V

Ground

VSS

VREFDQ

VREFCA

Reference Voltage for DQ

Reference Voltage for CA

Reference Pin for ZQ calibration

NOTE : Input only pins ( BA0-BA2, A0-A13, RAS, CAS, WE, CS, CKE, ODT and RESET ) do not supply termination.

AMS73CAG01808RA Rev. 1.0 December 2010

1 2 3 456 7 8...31

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型号	品牌	描述	获取价格	数据表
AMS73CAG02408RALJH8H	AMS	HIGH PERFORMANCE 1Gbit DDR3 SDRAM	获取价格
AMS73CAG02408RALJH8I	AMS	HIGH PERFORMANCE 1Gbit DDR3 SDRAM	获取价格
AMS73CAG02408RALJI8	AMS	HIGH PERFORMANCE 1Gbit DDR3 SDRAM	获取价格
AMS73CAG02408RALJI8E	AMS	HIGH PERFORMANCE 1Gbit DDR3 SDRAM	获取价格
AMS73CAG02408RALJI8H	AMS	HIGH PERFORMANCE 1Gbit DDR3 SDRAM	获取价格
AMS73CAG02408RALJI8I	AMS	HIGH PERFORMANCE 1Gbit DDR3 SDRAM	获取价格