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AMMP-6442

更新时间: 2024-01-09 16:39:56
品牌 Logo 应用领域
安华高科 - AVAGO 放大器功率放大器
页数 文件大小 规格书
8页 323K
描述
37- 40 GHz, 1W Linear Power Amplifier in SMT Package

AMMP-6442 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LCC8,.2SQ,28Reach Compliance Code:compliant
风险等级:5.81JESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:8封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC8,.2SQ,28电源:5 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
表面贴装:YES端子面层:Tin (Sn)

AMMP-6442 数据手册

 浏览型号AMMP-6442的Datasheet PDF文件第1页浏览型号AMMP-6442的Datasheet PDF文件第3页浏览型号AMMP-6442的Datasheet PDF文件第4页浏览型号AMMP-6442的Datasheet PDF文件第5页浏览型号AMMP-6442的Datasheet PDF文件第6页浏览型号AMMP-6442的Datasheet PDF文件第7页 
Electrical Specifications  
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.  
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6442 published specifications.  
3. This final package part performance is verified by a functional test correlated to actual performance at one or more  
frequencies.  
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may  
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)  
matching.  
5. The Gain and P1dB tested at 37GHz and 40GHz guaranteed with measurement accuracy +/-1.5dB for gain and +/-  
1.6dB for P1dB.  
Table 1. RF Electrical Characteristics  
TA=25°C, Vdd=5.0V, Idq=0.7V, Vg=-1V, Zo=50 Ω  
Parameter  
Min  
37  
Typ.  
Max  
Unit  
GHz  
dB  
Operational Frequency, Freq  
40  
Small-signal Gain, Gain  
20  
23  
30  
36  
8
Output Power at 1dB Gain Compression, P-1dB  
Relative Third Order Inter-modulation level (∆f=10MHz, Po=+12dBm, SCL), IM3  
Input Return Loss, RLin  
28  
dBm  
dBc  
dB  
Output Return Loss, RLout  
8
dB  
Reverse Isolation, Isolation  
45  
dB  
Table 2. Recommended Operating Range  
1. Ambient operational temperature TA = 25°C unless otherwise noted.  
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal  
Resistance at backside temperature (Tb) = 25°C calculated from measured data.  
Description  
Min.  
Typical  
700  
-1  
Max.  
Unit  
mA  
V
Comments  
Drain Supply Current, Idq  
Gate Supply Operating Voltage, Vg  
Vdd = 5V, Vg set for Idq Typical  
Idq=700mA  
-1.3  
-0.7  
2

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