Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
5. All tested parameters guaranteed with measurement accuracy +/- 2dB for P1dB of 17,25 and 32GHz +/- 0.5 for Gain
of 17GHz, +/- 1 dB for Gain of 25 and 32GHz
Table 1. RF Electrical Characteristics
TA=25°C, Vd=3.0V, Id(Q)=230mA, Zin=Zo=50 Ω
17-20GHz
20-30GHz
30-33GHz
Typ
Parameter
Min Typ Max
Min Typ Max
Min
18
Max Unit
dB
Comment
Small Signal Gain, Gain
14
16
19
22
22
20.5
Output Power at 1dBGain Compression,
P1dB
18 20.5
24.5
21
24
dBm
Output Power at 3dBGain Compression,
P3dB
21.5
24.5
30
23.5
30
dBm
dBm
Output Third Order Intercept Point,
OIP3
30
Reverse Isolation, Iso
45
10
10
45
10
14
45
8
dB
dB
dB
Input Return Loss, Rlin
Output Return Loss, RLout
10
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy.
Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Min.
Typical
Max.
Unit
Comments
Drain Supply Current, Id
230
mA
Vd=5 V, Vg set for typical IdQ –
quiescent current
Gate Supply Operating Voltage, Vg
Gate Supply Current, Ig
2
7
V
IdQ = 230 mA
mA
2