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AMIS30621C6216G PDF预览

AMIS30621C6216G

更新时间: 2024-02-02 00:02:31
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器电机
页数 文件大小 规格书
59页 639K
描述
Micro-Stepping Motor Driver

AMIS30621C6216G 技术参数

是否无铅: 不含铅生命周期:Not Recommended
零件包装代码:QFN包装说明:HVQCCN, LCC32,.27SQ,25
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.09模拟集成电路 - 其他类型:STEPPER MOTOR CONTROLLER
JESD-30 代码:S-XQCC-N32JESD-609代码:e3
长度:7 mm湿度敏感等级:3
功能数量:1端子数量:32
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装等效代码:LCC32,.27SQ,25封装形状:SQUARE
封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:6.5/29 V认证状态:Not Qualified
座面最大高度:0.9 mm子类别:Motion Control Electronics
最大供电电流 (Isup):10 mA最大供电电压 (Vsup):29 V
最小供电电压 (Vsup):6.5 V标称供电电压 (Vsup):8 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7 mmBase Number Matches:1

AMIS30621C6216G 数据手册

 浏览型号AMIS30621C6216G的Datasheet PDF文件第4页浏览型号AMIS30621C6216G的Datasheet PDF文件第5页浏览型号AMIS30621C6216G的Datasheet PDF文件第6页浏览型号AMIS30621C6216G的Datasheet PDF文件第8页浏览型号AMIS30621C6216G的Datasheet PDF文件第9页浏览型号AMIS30621C6216G的Datasheet PDF文件第10页 
AMIS30621  
Table 5. DC PARAMETERS  
Symbol  
Pins  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
SWITCH INPUT AND HARDWIRE ADDRESS INPUT  
Rt_  
Rt_  
Switch OPEN Resistance  
(Note 13)  
10  
kW  
kW  
V
OFF  
Switch ON Resistance  
(Note 13)  
Switch to GND or V  
2
ON  
BB  
SWI HW2  
V
V
range for guaranteed  
6
29  
45  
BB_sw  
lim_sw  
BB  
operation of SWI and HW2  
I
Current limitation  
Short to GND or V  
mA  
bat  
V
= 29 V  
BB  
HARDWIRED ADDRESS INPUTS AND TEST PIN  
V
V
Input level high  
Input level low  
Hysteresis  
V
BB  
V
BB  
V
BB  
= 14 V  
= 14 V  
= 14 V  
0.7 * V  
DD  
V
V
V
high  
low  
HW0  
HW1 TST  
0.3 * V  
DD  
HW  
0.075 * V  
DD  
hyst  
CHARGE PUMP  
V
CP  
Output voltage  
7 V < V v 14 V  
2 * V  
V
BB  
BB  
2.5  
VCP  
14 V < V  
V
BB  
+ 10  
V + 15  
BB  
V
BB  
C
C
External buffer capacitor  
220  
220  
470  
470  
nF  
nF  
buffer  
pump  
CPP CPN External pump capacitor  
PACKAGE THERMAL RESISTANCE VALUES  
Rth  
Rth  
Rth  
Rth  
Thermal resistance  
39  
19  
K/W  
K/W  
K/W  
K/W  
ja  
jp  
ja  
jp  
SO  
SO  
NQ  
junctiontoambient (2S2P)  
Thermal resistance  
junctiontoleads  
Simulated conform JEDEC  
JES.D51  
Thermal resistance  
junctiontoambient (2S2P)  
30  
Thermal resistance  
junctiontoleads and  
exposed pad  
0.95  
NQ  
6. Tested in production for 800 mA, 400 mA, 200 mA and 100 mA current settings for both X and Y coil.  
7. Based on characterization data.  
8. No more than 100 cumulated hours in life time above T .  
tw  
9. Thermal shutdown and low temperature warning are derived from thermal warning. Guaranteed by design.  
10.A buffer capacitor of minimum 100 mF is needed between V and GND. Short connections to the power supply are recommended.  
BB  
11. Pin V must not be used for any external supply  
DD  
12.The RAM content will not be altered above this voltage.  
13.External resistance value seen from pin SWI or HW2, including 1 kW series resistor. For the switch OPEN, the maximum allowed leakage  
current is represented by a minimum resistance seen from the pin.  
http://onsemi.com  
7
 

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