Datasheet > AM42BDS640AGTC8FT

AM42BDS640AGTC8FT

更新时间： 2024-02-11 01:30:39

品牌	Logo	应用领域
飞索 - SPANSION		内存集成电路
页数	文件大小	规格书
72页	1064K
描述
Memory Circuit, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93

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AM42BDS640AGTC8FT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	LFBGA,
针数：	93	Reach Compliance Code：	compliant
HTS代码：	8542.32.00.71	风险等级：	5.19
其他特性：	STATIC RAM IS ORGANISED AS 1M X 16	JESD-30 代码：	R-PBGA-B93
JESD-609代码：	e1	长度：	11.6 mm
内存密度：	67108864 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	功能数量：	1
端子数量：	93	字数：	4194304 words
字数代码：	4000000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	LFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.65 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN SILVER COPPER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	宽度：	8 mm
Base Number Matches：	1

AM42BDS640AGTC8FT 数据手册

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PRELIMINARY

Am42BDS640AG

Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation,

Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM

DISTINCTIVE CHARACTERISTICS

■ Power dissipation (typical values, C_L= 30 pF)

MCP Features

■ Power supply voltage of 1.65 to 1.95 volt

—

Burst Mode Read: 10 mA

Simultaneous Operation: 25 mA

Program/Erase: 15 mA

■ High performance

—

Access time as fast as 70 ns

Standby mode: 0.2 µA

■ Package

HARDWARE FEATURES

—

93-Ball FBGA

■ Software command sector locking

■ Handshaking: host monitors operations via RDY output

■ Hardware reset input (RESET#)

■ WP# input

■ Operating Temperature

—

–40°C to +85°C

Flash Memory Features

—

Write protect (WP#) function protects sectors 0, 1 (bottom

boot) or sectors 132 and 133 (top boot), regardless of sector

protect status

ARCHITECTURAL ADVANTAGES

■ Single 1.8 volt read, program and erase (1.65 to 1.95 volt)

■ Manufactured on 0.17 µm process technology

■ Simultaneous Read/Write operation

■ ACC input: Acceleration function reduces programming

time; all sectors locked when ACC = V_IL

—

Data can be continuously read from one bank while

executing erase/program functions in other bank

Zero latency between read and write operations

Four bank architecture: 16Mb/16Mb/16Mb/16Mb

■ CMOS compatible inputs, CMOS compatible outputs

■ Low V_CCwrite inhibit

—

SOFTWARE FEATURES

■ Programmable Burst Interface

■ Supports Common Flash Memory Interface (CFI)

—

2 Modes of Burst Read Operation

■ Software command set compatible with JEDEC 42.4

Linear Burst: 8, 16, and 32 words with wrap-around

Continuous Sequential Burst

standards

■ Data# Polling and toggle bits

■ Erase Suspend/Resume

■ Sector Architecture

—

Eight 8 Kword sectors and one hundred twenty-six 32

Kword sectors

—

Suspends or resumes an erase operation in one sector to

read data from, or program data to, other sectors

—

Banks A and D each contain four 8 Kword sectors and

thirty-one 32 Kword sectors; Banks B and C each contain

thirty-two 32 Kword sectors

■ Unlock Bypass Program command

—

Reduces overall programming time when issuing multiple

program command sequences

—

Eight 8 Kword boot sectors, four at the top of the address

range, and four at the bottom of the address range

■ Minimum 1 million erase cycle guarantee per sector

■ 20-year data retention at 125°C

SRAM Features

■ Power dissipation

—

Operating: 3 mA maximum

Standby: 15 µA maximum

PERFORMANCE CHARCTERISTICS

■ Read access times at 54/40 MHz

■ CE1s# and CE2s Chip Select

—

Burst access times of 13.5/20 ns @ 30 pF at industrial

temperature range

■ Power down features using CE1s# and CE2s

■ Data retention supply voltage: 1.0 to 2.2 volt

■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)

—

Asynchronous random access times of 70 ns (at 30 pF)

Synchronous latency of 87.5/95 ns

Publication# 26445 Rev: B Amendment/0

Issue Date: November 1, 2002

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM42BDS640AGTC8FT相关器件

型号	品牌	获取价格	描述	数据表
AM42BDS640AGTC8IS	SPANSION	获取价格	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM42BDS640AGTC8IS	AMD	获取价格	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Mem
AM42BDS640AGTC8IT	AMD	获取价格	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Mem
AM42BDS640AGTC8IT	SPANSION	获取价格	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM42BDS640AGTC9FS	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93
AM42BDS640AGTC9FT	SPANSION	获取价格	Memory Circuit, 4MX16, CMOS, PBGA93, 8 X 11.60 MM, FBGA-93
AM42BDS640AGTC9IS	AMD	获取价格	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Mem
AM42BDS640AGTC9IS	SPANSION	获取价格	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM42BDS640AGTC9IT	AMD	获取价格	64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Mem
AM42BDS640AGTC9IT	SPANSION	获取价格	Stacked Multi-Chip Package (MCP) Flash Memory and SRAM

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