Datasheet > AM29LV200BB120WAC

AM29LV200BB120WAC

更新时间： 2025-09-06 23:29:43

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
45页	1048K
描述
EEPROM\|FLASH\|128KX16/256KX8\|CMOS\|BGA\|48PIN\|PLASTIC

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AM29LV200BB120WAC 数据手册

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Am29LV200B

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 3.0 Volt-only Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

■ Embedded Algorithms

— 2.7 to 3.6 volt read and write operations for

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

battery-powered applications

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29LV200 device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

■ Minimum 1 million erase cycle guarantee per

— Full voltage range: access times as fast as 70 ns

sector

— Regulated voltage range: access times as fast as

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

55 ns

■ Ultra low power consumption (typical values at

5 MHz)

— 48-pin TSOP

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 44-pin SO

— 48-ball FBGA

■ Compatibility with JEDEC standards

— 15 mA program/erase current

— Pinout and software compatible with single-

■ Flexible sector architecture

power supply Flash

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

— Superior inadvertent write protection

three 64 Kbyte sectors (byte mode)

■ Data# Polling and toggle bits

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

— Provides a software method of detecting program

or erase operation completion

— Supports full chip erase

— Sector Protection features:

■ Ready/Busy# pin (RY/BY#)

A hardware method of locking a sector to prevent

any program or erase operations within that sector

— Provides a hardware method of detecting

program or erase cycle completion

Sectors can be locked in-system or via

programming equipment

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

■ Hardware reset pin (RESET#)

— Reduces overall programming time when issuing

— Hardware method to reset the device to reading

multiple program command sequences

array data

■ Top or bottom boot block configurations

available

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21521 Rev: D Amendment/+2

Issue Date: April 12, 2002

12 3 4 5 6 7...45

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与AM29LV200BB120WAC相关器件

型号	品牌	获取价格	描述	数据表
AM29LV200BB120WAE	ETC	获取价格	EEPROM\|FLASH\|128KX16/256KX8\|CMOS\|BGA\|48PIN\|PLASTIC
AM29LV200BB120WAI	ETC	获取价格	EEPROM\|FLASH\|128KX16/256KX8\|CMOS\|BGA\|48PIN\|PLASTIC
AM29LV200BB30DFC1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DFE1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DFI1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DPC1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DPE1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DPI1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DRC1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die
AM29LV200BB30DRE1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die

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