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AM29LV008B-120EEB PDF预览

AM29LV008B-120EEB

更新时间: 2024-02-14 10:34:06
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
39页 142K
描述
Flash Memory,

AM29LV008B-120EEB 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.74
Base Number Matches:1

AM29LV008B-120EEB 数据手册

 浏览型号AM29LV008B-120EEB的Datasheet PDF文件第33页浏览型号AM29LV008B-120EEB的Datasheet PDF文件第34页浏览型号AM29LV008B-120EEB的Datasheet PDF文件第35页浏览型号AM29LV008B-120EEB的Datasheet PDF文件第36页浏览型号AM29LV008B-120EEB的Datasheet PDF文件第37页浏览型号AM29LV008B-120EEB的Datasheet PDF文件第38页 
P R E L I M I N A R Y  
Figure 20, Alternate CE Controlled Write Operation  
cycle endurance is minimum, not typical. Revised Note  
1 to include write endurance; moved Note 1 references  
in table to table head. Consolidated and moved Note 1  
and Note 3 references in table to table head. Combined  
Note 2 and Note 5 into new Note 1, which applies to the  
entire table; revised to indicate that DQ5=1 after any  
maximum time. Comments for program and erase now  
straddle parameter rows. Separated the two sentences  
in Note 4 into new Notes 4 and 5; added corresponding  
note references to comment section.  
Timings:  
Changed 5555H to 555H in addresses waveform to  
match command definitions (Table 5).  
Erase and Programming Performance:  
Added typical chip erase specification. Renamed  
erase/program cycles specification to erase/program  
endurance. Corrected to indicate 1,000,000 cycle en-  
durance is typical, not maximum, and that 100,000  
Am29LV008T/Am29LV008B  
39  

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