P R E L I M I N A R Y
90 ns access time, optimizing performance in systems
The Am29LV008 device also features hardware sector
protection, implemented via external programming
equipment, which disables both program and erase op-
erations in any combination of the memory sectors.
where the power supply is in the regulated range of 3.0
to 3.6 volts.To eliminate bus contention, the device has
separate chip enable (CE), write enable (WE), and
output enable (OE) controls.
The Erase Suspend feature enables the user to pause
the erase operation, for any period of time, to read data
from or program data to a sector that was not being
erased. Thus, true background erase can be achieved.
The Am29LV008 is entirely command set-compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write cy-
cles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
The device features 3.0 volt, single-power-supply oper-
ation for both read and write functions. Internally gen-
erated and regulated voltages are provided for the
program and erase operations. A low V detector au-
CC
tomatically inhibits write operations during power tran-
sitions. The end of program or erase is detected by the
RY/BY pin. Data Polling of DQ7, or by the Toggle Bit
(DQ6). Once the end of a program or erase cycle has
been completed, the device automatically resets to the
read mode.
The Am29LV008 is programmed by executing the pro-
gram command sequence.This invokes the Embedded
Program Algorithm, which is an internal algorithm that
automatically times the program pulse widths and veri-
fies proper cell margin.The device is erased by execut-
ing the erase command sequence. This invokes the
Embedded Erase Algorithm, which is an internal algo-
rithm that automatically preprograms the array, if it is
not already programmed, before executing the erase
operation. During erase, the device automatically times
the erase pulse widths and verifies proper cell margin.
The Am29LV008 also has a hardware RESET pin.
When this pin is driven low, execution of any Embed-
ded Program or Erase Algorithm will be terminated.
The internal state machine is then be reset into the
read mode. Resetting the device will enable the sys-
tem’s microprocessor to read the boot-up firmware
from the Flash memory.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective-
ness. The Am29LV008 memory electrically erases
all bits within a sector simultaneously via Fowler-
Nordheim tunneling. The bytes are programmed one
byte at a time using the EPROM programming mecha-
nism of hot electron injection.
This device also features a sector erase architecture.
This allows for sectors of memory to be erased and re-
programmed without affecting the data contents of
other sectors. A sector is typically erased and verified
within 1.0 second. The Am29LV008 is fully erased
when shipped from the factory.
2
Am29LV008T/Am29LV008B
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