Datasheet > AM29F200BB-75DTH1

AM29F200BB-75DTH1

更新时间： 2024-02-26 07:06:10

品牌	Logo	应用领域
飞索 - SPANSION		/
页数	文件大小	规格书
10页	237K
描述
Flash, 256KX8, 70ns,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AM29F200BB-75DTH1 数据手册

浏览型号AM29F200BB-75DTH1的Datasheet PDF文件第2页

浏览型号AM29F200BB-75DTH1的Datasheet PDF文件第3页

浏览型号AM29F200BB-75DTH1的Datasheet PDF文件第4页

浏览型号AM29F200BB-75DTH1的Datasheet PDF文件第5页

浏览型号AM29F200BB-75DTH1的Datasheet PDF文件第6页

浏览型号AM29F200BB-75DTH1的Datasheet PDF文件第7页

SUPPLEMENT

Am29F200B Known Good Die

2 Megabit (256 K x 8-Bit/128 K x 16-Bit)

CMOS 5.0 Volt-only, Sectored Flash Memory—Die Revision 1

DISTINCTIVE CHARACTERISTICS

■ 5.0 V ± 10% for read and write operations

■ Embedded Algorithms

— Minimizes system level power requirements

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29F200A device

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ High performance

— 70, 90, or 120 ns access time

■ Minimum 1,000,000 write/erase cycles

guaranteed

■ Low power consumption

■ Compatible with JEDEC standards

— 20 mA typical active read current (byte mode)

— Pinout and software compatible with

single-power-supply flash

— 28 mA typical active read current for

(word mode)

— Superior inadvertent write protection

— 30 mA typical program/erase current

— 1 µA typical standby current

■ Data# Polling and Toggle Bit

— Detects program or erase cycle completion

■ Ready/Busy# output (RY/BY#)

■ Sector erase architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

three 64 Kbyte sectors (byte mode)

— Hardware method for detection of program or

erase cycle completion

— One 8 Kword, two 4 Kword, one 16 Kword, and

three 32 Kword sectors (word mode)

■ Erase Suspend/Resume

— Supports full chip erase

— Supports reading data from a sector not being

erased

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

■ Hardware RESET# pin

— Resets internal state machine to the reading

array data

Sectors can be locked via programming

equipment

■ 20-year data retention at 125°C

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Tested to datasheet specifications at

temperature

■ Top or bottom boot block configurations

— High temperature range (–55°C to +140°C)

available

■ Quality and reliability levels equivalent to

standard packaged components

Publication# 21257 Rev: D Amendment/+2

Issue Date: July 12, 1999

12 3 4 5 6 7...10

中文翻译

下载PDF

与AM29F200BB-75DTH1相关器件

型号	品牌	获取价格	描述	数据表
AM29F200BB-75DTI1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BB-75DTK1	SPANSION	获取价格	Flash, 128KX16, 70ns, SURF TAPE PACKAGE-42
AM29F200BB-75DW1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BB-75DWC1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BB-75DWC1	SPANSION	获取价格	Flash, 128KX16, 70ns, WAFER-42
AM29F200BB-75DWD1	SPANSION	获取价格	Flash, 128KX16, 70ns, WAFER-42
AM29F200BB-75DWE1	AMD	获取价格	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Rev
AM29F200BB-75DWE1	SPANSION	获取价格	Flash, 128KX16, 70ns, WAFER-42
AM29F200BB-75DWF1	SPANSION	获取价格	Flash, 128KX16, 70ns, WAFER-42
AM29F200BB-75DWH1	SPANSION	获取价格	Flash, 256KX8, 70ns,

与AM29F200BB-75DTH1相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

11
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

10
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

12
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

15

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F200BB-75DTH1

AM29F200BB-75DTH1 数据手册

与AM29F200BB-75DTH1相关器件

与AM29F200BB-75DTH1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AM29F200BB-75DTH1

AM29F200BB-75DTH1 数据手册

与AM29F200BB-75DTH1相关器件

与AM29F200BB-75DTH1相关文章

您还可以找

您在本页遇到什么问题？