5秒后页面跳转
AM29DL800BT120EE PDF预览

AM29DL800BT120EE

更新时间: 2024-09-30 22:39:39
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路光电二极管
页数 文件大小 规格书
43页 545K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL800BT120EE 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TSOP1包装说明:TSOP1, TSSOP48,.8,20
针数:48Reach Compliance Code:unknown
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.51
风险等级:5.65最长访问时间:120 ns
其他特性:MINIMUM 1000K PROGRAM/ERASE CYCLES; CAN ALSO BE CONFIGURED AS 512K X 16备用内存宽度:8
启动块:TOP命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G48
JESD-609代码:e0长度:18.4 mm
内存密度:8388608 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:2,4,2,14端子数量:48
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:1MX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.045 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:12 mmBase Number Matches:1

AM29DL800BT120EE 数据手册

 浏览型号AM29DL800BT120EE的Datasheet PDF文件第2页浏览型号AM29DL800BT120EE的Datasheet PDF文件第3页浏览型号AM29DL800BT120EE的Datasheet PDF文件第4页浏览型号AM29DL800BT120EE的Datasheet PDF文件第5页浏览型号AM29DL800BT120EE的Datasheet PDF文件第6页浏览型号AM29DL800BT120EE的Datasheet PDF文件第7页 
PRELIMINARY  
Am29DL800B  
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)  
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory  
DISTINCTIVE CHARACTERISTICS  
Simultaneous Read/Write operations  
Sector protection  
— Host system can program or erase in one bank,  
then immediately and simultaneously read from  
the other bank  
— Hardware method of locking a sector to prevent  
any program or erase operation within that  
sector  
— Zero latency between read and write operations  
— Read-while-erase  
— Sectors can be locked in-system or via  
programming equipment  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
— Read-while-program  
Single power supply operation  
Top or bottom boot block configurations  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
available  
Embedded Algorithms  
Manufactured on 0.35 µm process technology  
— Embedded Erase algorithm automatically  
pre-programs and erases sectors or entire chip  
— Compatible with 0.5 µm Am29DL800 device  
High performance  
— Embedded Program algorithm automatically  
programs and verifies data at specified address  
— Access times as fast as 70 ns  
Low current consumption (typical values  
Minimum 1,000,000 program/erase cycles  
at 5 MHz)  
guaranteed per sector  
— 7 mA active read current  
Package options  
— 44-pin SO  
— 21 mA active read-while-program or read-while-  
erase current  
— 48-pin TSOP  
— 48-ball FBGA  
— 17 mA active program-while-erase-suspended  
current  
Compatible with JEDEC standards  
— 200 nA in standby mode  
— Pinout and software compatible with  
single-power-supply flash standard  
— 200 nA in automatic sleep mode  
— Standard tCE chip enable access time applies to  
transition from automatic sleep mode to active  
mode  
— Superior inadvertent write protection  
Data# Polling and Toggle Bits  
Flexible sector architecture  
— Provides a software method of detecting  
program or erase cycle completion  
Two 16 Kword, two 8 Kword, four 4 Kword, and  
fourteen 32 Kword sectors in word mode  
Ready/Busy# output (RY/BY#)  
Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and  
fourteen 64 Kbyte sectors in byte mode  
— Hardware method for detecting program or  
erase cycle completion  
— Any combination of sectors can be erased  
— Supports full chip erase  
Erase Suspend/Erase Resume  
— Suspends or resumes erasing sectors to allow  
reading and programming in other sectors  
Unlock Bypass Program Command  
— Reduces overall programming time when  
issuing multiple program command sequences  
— No need to suspend if sector is in the other bank  
Hardware reset pin (RESET#)  
— Hardware method of resetting the device to  
reading array data  
This document contains information on a product under development at Advanced Micro Devices. The information  
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed  
product without notice.  
Publication# 21519 Rev: A Amendment/+3  
Issue Date: April 1998  

与AM29DL800BT120EE相关器件

型号 品牌 获取价格 描述 数据表
AM29DL800BT120EEB AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120EF AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120EI AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120EIB AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120EK AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FC AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FCB AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FD SPANSION

获取价格

Flash, 512KX16, 120ns, PDSO48, REVERSE, MO-142DD, TSOP-48
AM29DL800BT120FE AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FEB AMD

获取价格

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me