Datasheet > AM29DL800BT120FE

AM29DL800BT120FE

更新时间： 2024-09-30 23:00:31

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
43页	545K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

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AM29DL800BT120FE 数据手册

PRELIMINARY

Am29DL800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Simultaneous Read/Write operations

■ Sector protection

— Host system can program or erase in one bank,

then immediately and simultaneously read from

the other bank

— Hardware method of locking a sector to prevent

any program or erase operation within that

sector

— Zero latency between read and write operations

— Read-while-erase

— Sectors can be locked in-system or via

programming equipment

— Temporary Sector Unprotect feature allows code

changes in previously locked sectors

— Read-while-program

■ Single power supply operation

■ Top or bottom boot block configurations

— Full voltage range: 2.7 to 3.6 volt read and write

operations for battery-powered applications

available

■ Embedded Algorithms

■ Manufactured on 0.35 µm process technology

— Embedded Erase algorithm automatically

pre-programs and erases sectors or entire chip

— Compatible with 0.5 µm Am29DL800 device

■ High performance

— Embedded Program algorithm automatically

programs and verifies data at specified address

— Access times as fast as 70 ns

■ Low current consumption (typical values

■ Minimum 1,000,000 program/erase cycles

at 5 MHz)

guaranteed per sector

— 7 mA active read current

■ Package options

— 44-pin SO

— 21 mA active read-while-program or read-while-

erase current

— 48-pin TSOP

— 48-ball FBGA

— 17 mA active program-while-erase-suspended

current

■ Compatible with JEDEC standards

— 200 nA in standby mode

— Pinout and software compatible with

single-power-supply flash standard

— 200 nA in automatic sleep mode

— Standard t_CEchip enable access time applies to

transition from automatic sleep mode to active

mode

— Superior inadvertent write protection

■ Data# Polling and Toggle Bits

■ Flexible sector architecture

— Provides a software method of detecting

program or erase cycle completion

— Two 16 Kword, two 8 Kword, four 4 Kword, and

fourteen 32 Kword sectors in word mode

■ Ready/Busy# output (RY/BY#)

— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and

fourteen 64 Kbyte sectors in byte mode

— Hardware method for detecting program or

erase cycle completion

— Any combination of sectors can be erased

— Supports full chip erase

■ Erase Suspend/Erase Resume

— Suspends or resumes erasing sectors to allow

reading and programming in other sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when

issuing multiple program command sequences

— No need to suspend if sector is in the other bank

■ Hardware reset pin (RESET#)

— Hardware method of resetting the device to

reading array data

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 21519 Rev: A Amendment/+3

Issue Date: April 1998

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与AM29DL800BT120FE相关器件

型号	品牌	获取价格	描述	数据表
AM29DL800BT120FEB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FF	SPANSION	获取价格	Flash, 512KX16, 120ns, PDSO48, REVERSE, MO-142DD, TSOP-48
AM29DL800BT120FI	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FIB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120FK	SPANSION	获取价格	Flash, 512KX16, 120ns, PDSO48, REVERSE, MO-142DD, TSOP-48
AM29DL800BT120SC	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120SCB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120SD	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120SE	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me
AM29DL800BT120SEB	AMD	获取价格	8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Me

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