DATA SHEET
Am29DL800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
■ Sector protection
— Host system can program or erase in one bank,
then immediately and simultaneously read from
the other bank
— Hardware method of locking a sector to prevent
any program or erase operation within that sector
— Sectors can be locked in-system or via
programming equipment
— Zero latency between read and write operations
— Read-while-erase
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
— Read-while-program
■ Top or bottom boot block configurations
■ Single power supply operation
available
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
■ Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
■ Manufactured on 0.35 µm process technology
— Compatible with 0.5 µm Am29DL800 device
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ High performance
— Access times as fast as 70 ns
■ Minimum 1,000,000 program/erase cycles
■ Low current consumption (typical values
guaranteed per sector
at 5 MHz)
■ Package options
— 44-pin SO
— 7 mA active read current
— 21 mA active read-while-program or read-while-
erase current
— 48-pin TSOP
— 48-ball FBGA
— 17 mA active program-while-erase-suspended current
— 200 nA in standby mode
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— 200 nA in automatic sleep mode
— Standard t chip enable access time applies to
CE
— Superior inadvertent write protection
transition from automatic sleep mode to active mode
■ Data# Polling and Toggle Bits
■ Flexible sector architecture
— Provides a software method of detecting
program or erase cycle completion
— Two 16 Kword, two 8 Kword, four 4 Kword, and
fourteen 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
fourteen 64 Kbyte sectors in byte mode
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
— Any combination of sectors can be erased
— Supports full chip erase
■ Erase Suspend/Erase Resume
■ Unlock Bypass Program Command
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— Reduces overall programming time when
issuing multiple program command sequences
— No need to suspend if sector is in the other bank
■ Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
Publication# 21519 Rev: C Amendment: 4
Issue Date: December 4, 2006
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