Datasheet > AM29DL164DB120

AM29DL164DB120

更新时间： 2024-02-04 06:14:35

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
57页	1258K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

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AM29DL164DB120 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	TFBGA,
针数：	48	Reach Compliance Code：	compliant
ECCN代码：	3A001.A.2.C	HTS代码：	8542.32.00.51
风险等级：	5.84	最长访问时间：	120 ns
其他特性：	20 YEAR DATA RETENTION	备用内存宽度：	8
启动块：	BOTTOM	数据保留时间-最小值：	20
JESD-30 代码：	R-PBGA-B48	JESD-609代码：	e1
长度：	9 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	16
湿度敏感等级：	3	功能数量：	1
端子数量：	48	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-55 °C
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	编程电压：	3 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	MILITARY
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	40	类型：	NOR TYPE
宽度：	8 mm

AM29DL164DB120 数据手册

Am29DL16xD

16 Megabit (2 M x 8-Bit/1 M x 16-Bit)

CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

— 10 mA active read current at 5 MHz

— 200 nA in standby or automatic sleep mode

■ Simultaneous Read/Write operations

— Data can be continuously read from one bank while

executing erase/program functions in other bank

■ Minimum 1 million write cycles guaranteed per sector

■ 20 Year data retention at 125°C

— Zero latency between read and write operations

— Reliable operation for the life of the system

■ Multiple bank architectures

SOFTWARE FEATURES

— Four devices available with different bank sizes (refer

to Table 2)

■ Data Management Software (DMS)

— AMD-supplied software manages data programming

and erasing, enabling EEPROM emulation

■ SecSi™ (Secured Silicon) Sector

— Current version of device has 64 Kbytes; future

versions will have 256 bytes

— Eases sector erase limitations

■ Supports Common Flash Memory Interface (CFI)

— Factory locked and identifiable: 16 bytes available for

secure, random factory Electronic Serial Number;

verifiable as factory locked through autoselect

function. ExpressFlash option allows entire sector to

be available for factory-secured data

■ Erase Suspend/Erase Resume

— Suspends erase operations to allow programming in

same bank

■ Data# Polling and Toggle Bits

— Provides a software method of detecting the status of

program or erase cycles

— Customer lockable: Can be read, programmed, or

erased just like other sectors. Once locked, data

cannot be changed

■ Unlock Bypass Program command

— Reduces overall programming time when issuing

multiple program command sequences

■ Zero Power Operation

— Sophisticated power management circuits reduce

power consumed during inactive periods to nearly

zero

HARDWARE FEATURES

■ Package options

■ Any combination of sectors can be erased

— 48-ball Very Thin Profile Fine-pitch BGA

— 48-ball Fine-pitch BGA

— 64-ball Fortified BGA

— 48-pin TSOP

■ Ready/Busy# output (RY/BY#)

— Hardware method for detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

■ Top or bottom boot block

— Hardware method of resetting the internal state

machine to reading array data

■ Manufactured on 0.23 µm process technology

— Compatible with Am29DL16xC devices

■ Compatible with JEDEC standards

■ WP#/ACC input pin

— Write protect (WP#) function allows protection of two

outermost boot sectors, regardless of sector protect status

— Pinout and software compatible with

single-power-supply flash standard

— Acceleration (ACC) function accelerates program

timing

■ Sector protection

PERFORMANCE CHARACTERISTICS

— Hardware method of locking a sector, either

in-system or using programming equipment, to

prevent any program or erase operation within that

sector

■ High performance

— Access time as fast 70 ns

— Program time: 7 µs/word typical utilizing Accelerate function

■ Ultra low power consumption (typical values)

— Temporary Sector Unprotect allows changing data in

protected sectors in-system

— 2 mA active read current at 1 MHz

Publication# 21533 Rev: E Amendment/+4

Issue Date: May 26, 2004

This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Refer to AMD’s Website (www.amd.com) for the latest information.

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与AM29DL164DB120相关器件

型号	品牌	描述	获取价格	数据表
AM29DL164DB120EE	ETC	x8/x16 Flash EEPROM	获取价格
AM29DL164DB120EEN	ETC	x8/x16 Flash EEPROM	获取价格
AM29DL164DB120EF	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem	获取价格
AM29DL164DB120EI	AMD	16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem	获取价格
AM29DL164DB120EI	SPANSION	Flash, 1MX16, 120ns, PDSO48, MO-142BDD, TSOP-48	获取价格
AM29DL164DB120EIN	ETC	x8/x16 Flash EEPROM	获取价格

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