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AM29DL163DT90PCF PDF预览

AM29DL163DT90PCF

更新时间: 2024-01-13 10:07:42
品牌 Logo 应用领域
超微 - AMD 闪存内存集成电路
页数 文件大小 规格书
57页 1258K
描述
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory

AM29DL163DT90PCF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:MO-180BA, SSOP-56
针数:56Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.56最长访问时间:90 ns
备用内存宽度:16启动块:TOP
JESD-30 代码:R-PDSO-G56JESD-609代码:e3
长度:23.7 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:56字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:SSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:3 V
认证状态:Not Qualified座面最大高度:2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40类型:NOR TYPE
宽度:13.3 mmBase Number Matches:1

AM29DL163DT90PCF 数据手册

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Revision E + 2 (February 14, 2003)  
Revision E+3 (February 25, 2004)  
Global  
AC Characteristics  
Added VBF048 package, Very Thin Profile Fine Pitch  
Ball Grid Array, to Distinctive Characteristics, General  
Description, Ordering Information, Connection Dia-  
grams, and Physical Dimensions sections.  
Corrected tSR/W in Figure 20, Back-to-back Read/Write  
Cycle Timings.  
Revision E+4 (May 26, 2004)  
Ordering Information  
Added Pb-Free OPNs.  
Trademarks  
Copyright © 2004 Advanced Micro Devices, Inc. All rights reserved.  
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.  
ExpressFlash is a trademark of Advanced Micro Devices, Inc.  
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.  
May 26, 2004  
Am29DL16xD  
57  

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