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AM29DL162DT70EIN PDF预览

AM29DL162DT70EIN

更新时间： 2024-01-25 00:21:22
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
52页 936K
描述
x8/x16 Flash EEPROM

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中文翻译

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AM29DL162DT70EIN 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.79
最长访问时间：70 ns备用内存宽度：8
启动块：TOP命令用户界面：YES
通用闪存接口：YES数据轮询：YES
JESD-30 代码：R-PBGA-B48内存密度：16777216 bit
内存集成电路类型：FLASH内存宽度：16
部门数/规模：8,31端子数量：48
字数：1048576 words字数代码：1000000
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX16封装主体材料：PLASTIC/EPOXY
封装代码：FBGA封装等效代码：BGA48,6X8,32
封装形状：RECTANGULAR封装形式：GRID ARRAY, FINE PITCH
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified就绪/忙碌：YES
部门规模：8K,64K最大待机电流：0.000005 A
子类别：Flash Memories最大压摆率：0.045 mA
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.8 mm端子位置：BOTTOM
切换位：YES类型：NOR TYPE
Base Number Matches：1

AM29DL162DT70EIN 数据手册

 浏览型号AM29DL162DT70EIN的Datasheet PDF文件第46页浏览型号AM29DL162DT70EIN的Datasheet PDF文件第47页浏览型号AM29DL162DT70EIN的Datasheet PDF文件第48页浏览型号AM29DL162DT70EIN的Datasheet PDF文件第49页浏览型号AM29DL162DT70EIN的Datasheet PDF文件第50页浏览型号AM29DL162DT70EIN的Datasheet PDF文件第51页 
Deleted references to the 56-pin SSOP and the corre-  
sponding 70R speed option.  
Revision D (February 22, 2000)  
Global  
Ordering Information  
The Am29DL16x family has migrated to a new 0.23  
µm process technology, which is indicated by a “D” in  
the ordering part number. All references in this docu-  
ment have been changed to reflect the new process.  
Added valid combinations for the Am29DL164D device  
in TSOP. Added valid combinations for the  
Am29DL162D devices in TSOP and FBGA packages.  
Deleted valid combinations for the 80 ns  
Am29DL164D device in FBGA package.  
Distinctive Characteristics  
Under “Performance Characteristics,” the typical ac-  
celerated programming time was changed to match  
the AC tables.  
Device Bus Operations  
Table 3, Sector Addresses for Top Boot Sector De-  
vices: In note below table, corrected last device part  
number to top boot.  
AC Characteristics  
Figure 17, Program Operations Timing; Figure 19,  
Chip/Sector Erase Operations: Deleted tGHWL and  
changed OE# waveform to start at high.  
Table 7, Autoselect Codes: The SecSi Sector Indicator  
Bit values have changed from 80h and 00h to 81h and  
01h, respectively.  
Erase and Program Operations table; Alternate CE#  
Controlled Erase and Program Operations table:  
Changed the typical and maximum specifications for  
programming time.  
Command Definitions  
Table 14, Command Definitions: The SecSi Sector In-  
dicator Bit values have changed from 80h and 00h to  
81h and 01h, respectively.  
Erase and Programming Performance  
AC Characteristics  
In the table, changed the typical and maximum specifi-  
cations for programming time. The typical and maxi-  
mum chip programming times in both byte and word  
modes are reduced.  
Read-only Operations table: Changed parameter tDF to  
16 ns for all speed options. Added Note 3.  
Revision D+2 (September 4, 2000)  
Physical Dimensions  
Deleted remaining references to 80 ns speed option,  
which was officially removed in Revision D+1. Cor-  
rected references to Am29DL16xC, which officially  
changed to Am29DL16xD in Revision D.  
Replaced figures with more detailed illustrations.  
Revision D+1 (June 21, 2000)  
Global  
Revision D+3 (November 22, 2000)  
Data sheet designation has changed from “Advance  
Information” to “Preliminary.”  
Global  
Deleted Preliminary status from document. Added  
table of contents.  
Trademarks  
Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved.  
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.  
ExpressFlash is a trademark of Advanced Micro Devices, Inc.  
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.  
52  
Am29DL162D/163D/164D  
1...49505152

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与AM29DL162DT70EIN相关器件

型号 品牌 获取价格 描述 数据表
AM29DL162DT70PCF AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL162DT70PCI AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL162DT70PCI SPANSION

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 		Flash, 1MX16, 70ns, PBGA64, 13 X 11 MM, 1.0 MM PITCH, FBGA-64
AM29DL162DT70VRF AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL162DT70VRF SPANSION

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 		Flash, 1MX16, 70ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, LEAD FREE, VBGA-48
AM29DL162DT70VRI AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL162DT70VRI SPANSION

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 		Flash, 1MX16, 70ns, PBGA48, 8.15 X 6.15 MM, 0.80 MM PITCH, VBGA-48
AM29DL162DT70WCF AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL162DT70WCI AMD

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 		16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Mem
AM29DL162DT70WCIN ETC

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 		x8/x16 Flash EEPROM

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