FINAL
Am27C010
1 Megabit (128 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
■ Fast access time
■ Latch-up protected to 100 mA from –1 V to
VCC + 1 V
— Speed options as fast as 45 ns
■ Low power consumption
■ High noise immunity
■ Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
— 20 µA typical CMOS standby current
■ JEDEC-approved pinout
■ Single +5 V power supply
■ Standard 28-pin DIP, PDIP, and 32-pin PLCC
■ ±10% power supply tolerance standard
■ 100% Flashrite™ programming
— Typical programming time of 16 seconds
packages
GENERAL DESCRIPTION
The Am27C010 is a 1 Megabit, ultraviolet erasable pro-
grammable read-only memory. It is organized as 128K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
thus eliminating bus contention in a multiple bus micro-
processor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 100 mW in active mode,
and 100 µW in standby mode.
All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in
blocks, or at random. The device supports AMD’s
Flashrite programming algorithm (100 µs pulses), re-
sulting in a typical programming time of 16 seconds.
Data can be typically accessed in less than 45 ns, al-
lowing high-performance microprocessors to operate
without any WAIT states. The device offers separate
Output Enable (OE#) and Chip Enable (CE#) controls,
BLOCK DIAGRAM
V
Data Outputs
DQ0–DQ7
CC
V
V
SS
PP
OE#
CE#
Output Enable
Chip Enable
and
Output
Buffers
Prog Logic
PGM#
Y
Y
Gating
Decoder
A0–A16
Address
Inputs
1,048,576
Bit Cell
Matrix
X
Decoder
10205G-1
Publication# 10205 Rev: G Amendment/0
Issue Date: May 1998