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ALM31222-TR2G PDF预览

ALM31222-TR2G

更新时间: 2024-02-09 18:49:06
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器
页数 文件大小 规格书
13页 259K
描述
1-Watt High Linearity Amplifier

ALM31222-TR2G 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:MODULE,22LEAD,0.25Reach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:13.7 dB最大输入功率 (CW):25 dBm
功能数量:1端子数量:22
最大工作频率:2700 MHz最小工作频率:1700 MHz
封装主体材料:PLASTIC/EPOXY封装等效代码:MODULE,22LEAD,0.25
电源:5 V射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers最大压摆率:470 mA
Base Number Matches:1

ALM31222-TR2G 数据手册

 浏览型号ALM31222-TR2G的Datasheet PDF文件第1页浏览型号ALM31222-TR2G的Datasheet PDF文件第2页浏览型号ALM31222-TR2G的Datasheet PDF文件第4页浏览型号ALM31222-TR2G的Datasheet PDF文件第5页浏览型号ALM31222-TR2G的Datasheet PDF文件第6页浏览型号ALM31222-TR2G的Datasheet PDF文件第7页 
[7]  
Electrical Specifications  
T = 25 °C, Vdd =5V, Vctrl=5V, RF performance at 2.0 GHz, measured on demo board (see Figure 7) unless otherwise  
A
specified.  
Symbol  
Ids  
Parameter and Test Condition  
Quiescent current  
Units  
mA  
mA  
dB  
Min.  
Typ.  
415  
10.4  
14.9  
47.9  
31.5  
52  
Max.  
370  
470  
Ictrl  
Vctrl current  
-
-
Gain  
OIP3 [8]  
OP1dB  
PAE  
Gain  
13.7  
16.8  
Output Third Order Intercept Point  
Output Power at 1dB Gain Compression  
Power Added Efficiency  
Noise Figure  
dBm  
dBm  
%
44.5  
-
-
-
-
-
-
-
30  
-
NF  
dB  
-
2.7  
S11  
Input Return Loss, 50Ω source  
Output Return Loss, 50Ω load  
Reverse Isolation  
dB  
-
-10  
S22  
dB  
-
-10  
S12  
dB  
-
-30  
Notes:  
7. Measurements at 2GHz obtained using demo board described in Figure 6 and 7.  
8. 2GHz OIP3 test condition: F - F = 10MHz with input power of -5dBm per tone measured at worse case side band.  
RF1  
RF2  
9. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and  
application note (if applicable) for more details.  
3

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