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ALM31122-TR2G PDF预览

ALM31122-TR2G

更新时间: 2024-02-22 10:25:51
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器
页数 文件大小 规格书
12页 622K
描述
700MHz - 1GHz 1-Watt High Linearity Amplifier

ALM31122-TR2G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LCC22(UNSPEC)Reach Compliance Code:compliant
风险等级:5.82Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:13.7 dB最大输入功率 (CW):25 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:22最大工作频率:1000 MHz
最小工作频率:700 MHz最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC22(UNSPEC)电源:5 V
射频/微波设备类型:WIDE BAND MEDIUM POWER子类别:RF/Microwave Amplifiers
最大压摆率:440 mA表面贴装:YES
技术:GAASBase Number Matches:1

ALM31122-TR2G 数据手册

 浏览型号ALM31122-TR2G的Datasheet PDF文件第1页浏览型号ALM31122-TR2G的Datasheet PDF文件第3页浏览型号ALM31122-TR2G的Datasheet PDF文件第4页浏览型号ALM31122-TR2G的Datasheet PDF文件第5页浏览型号ALM31122-TR2G的Datasheet PDF文件第6页浏览型号ALM31122-TR2G的Datasheet PDF文件第7页 
[2]  
Absolute Maximum Rating T =25°C  
A
[3]  
Thermal Resistance  
θ = 22 °C/W  
jc  
Symbol  
Vdd, max  
Parameter  
Device Voltage, RF output to ground  
Units  
V
Absolute Max.  
5.5  
(Vdd = 5V, Idd = 400mA, Tc = 85 °C)  
Notes:  
Ids, max  
Vctrl,max  
Pin,max  
Pdiss  
Device Drain Current  
Control Voltage  
mA  
V
750  
2. Operation of this device in excess of any of  
these limits may cause permanent damage.  
3. Thermal resistance measured using Infra-Red  
measurement technique.  
4. Board (bottom of the device) temperature TB  
is 25 °C. Derate 45.7mW/ °C for Tc > 59.3 °C.  
5.5  
CW RF Input Power  
Total Power Dissipation [4]  
Junction Temperature  
Storage Temperature  
dBm  
W
oC  
25  
4.125  
150  
Tj,max  
TSTG  
oC  
-65 to 150  
[5, 6]  
Product Consistency Distribution Charts  
CPK = 4.29  
Std Dev = 0.208  
CPK = 2.22  
Std Dev = 7  
.34  
.36  
.38  
.40  
.42  
.44  
44  
46  
48  
50  
52  
Figure 2. OIP3; LSL = 45dBm, nominal = 47.6dBm  
Figure 1. Ids; LSL = 340mA, nominal = 394mA, USL = 440mA  
Std Dev = 0.65  
CPK = 5.73  
Std Dev = 0.097  
40  
45  
50  
55  
60  
30  
30.5  
31  
31.5  
32  
32.5  
33  
Figure 4. PAE at P1dB; nominal = 52.5%  
Figure 3. P1dB; LSL = 30dBm, nominal = 31.6dBm  
CPK = 4.21  
Std Dev = 0.133  
Notes:  
5. Distribution data sample size is 500 samples taken from 3 different  
wafers. T = 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 900MHz  
A
unless otherwise specified. Future wafers allocated to this product  
may have nominal values anywhere between the upper and lower  
limits.  
13.5  
14  
14.5  
15  
15.5  
16  
16.5  
17  
17.5  
6. Measurements are made on a production test board. Input trace  
losses have not been de-embedded from actual measurements.  
Figure 5. Gain; LSL=13.7dB, Nominal = 15.6dB, USL=17.3dB  
2

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