[2]
Absolute Maximum Rating T =25ꢀC
A
[3]
Absolute
Max.
Thermal Resistance
θ = 15ºC/W
jc
Symbol
Vdd,max
Ids,max
Vctrl,max
Pin,max
Pdiss
Parameter
Units
(Vdd = 5V, Ids = 810mA, Tc = 85°C)
Notes:
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
V
5.5
2. Operation of this device in excess of any of
these limits may cause permanent damage.
3. Thermal resistance measured using Infra-Red
measurement technique.
4. This is limited by maximum Vdd and Ids.
Derate 66.7mW/ ꢀC for Tc > 26.2ꢀC.
mA
V
1500
5.5
CW RF Input Power
dBm
W
28
Total Power Dissipation [4]
Junction Temperature
Storage Temperature
8.25
150
Tj, max
TSTG
°C
°C
-65 to 150
[5]
Product Consistency Distribution Charts
LSL
LSL
USL
CPK = 0.80
Std Dev = 0.04
CPK = 0.95
Std Dev = 0.889
47
48
49
50
51
52
53
54
55
.600
.700
.800
.900
1.000
Figure 1. Ids; LSL = 690mA, nominal = 810mA, USL = 910mA
Figure 2. OIP3; LSL = 48dBm, nominal = 51dBm
LSL
CPK = 2.495
Std Dev = 0.134
Std Dev = 1.504
32.5
33
33.5
34
34.5
35
35.5
40
42
44
46
48
50
52
54
Figure 3. P1dB; LSL = 33dBm, nominal = 34.5dBm
Figure 4. PAE at P1dB; nominal = 46.6%
LSL
USL
Note:
CPK = 2.011
Std Dev = 0.184
5. Distribution data sample size is 500 samples taken from 3 different
wafer lots. T = 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 3.5GHz
A
unless otherwise specified. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
6. Measurements are made on a production test board. Input trace
losses have not been de-embedded from actual measurements.
11
11.5
12
12.5
13
13.5
14
14.5
Figure 5. Gain; LSL=11.2dB, Nominal = 12.6dB, USL=14.2dB
2