5秒后页面跳转
ALM-12124-BLKG PDF预览

ALM-12124-BLKG

更新时间: 2024-02-29 23:13:29
品牌 Logo 应用领域
安华高科 - AVAGO 开关放大器光电二极管
页数 文件大小 规格书
12页 299K
描述
50 Watt High Power SPDT Switch with LNA Module

ALM-12124-BLKG 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LCC24(UNSPEC)Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.81安装特点:SURFACE MOUNT
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:LCC24(UNSPEC)
电源:5,28 V射频/微波设备类型:NARROW BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAASBase Number Matches:1

ALM-12124-BLKG 数据手册

 浏览型号ALM-12124-BLKG的Datasheet PDF文件第2页浏览型号ALM-12124-BLKG的Datasheet PDF文件第3页浏览型号ALM-12124-BLKG的Datasheet PDF文件第4页浏览型号ALM-12124-BLKG的Datasheet PDF文件第5页浏览型号ALM-12124-BLKG的Datasheet PDF文件第6页浏览型号ALM-12124-BLKG的Datasheet PDF文件第7页 
ALM-12124  
1.88 GHz – 2.025 GHz  
50 Watt High Power SPDT Switch with LNA Module  
Data Sheet  
Description  
Features  
Avago TechnologiesALM-12124 is a multi-chip integrated  Very Low Noise Figure  
module that comprise of a 50 Watt CW high power SPDT  
switch, 1 stage low noise amplifier and 2 stage high  
gain driver amplifier through the use of Avago Techno-  
 High Power Switch design  
st  
nd  
 50 dB isolation between LNA1_Out and LNA2_In  
3
logies’ proprietary 0.25 m GaAs Enhancement-mode  Small package size 8.0 x 8.0 x 1.2 mm  
pHEMT process and low distortion silicon PIN diode  
technologies.  
[1]  
 GaAs E-pHEMT Technology  
 Low Distortion Silicon PIN Diode Technology  
 MSL 2a and Lead-free  
3
The ALM-12124 is housed in a compact 8.0 x 8.0 x 1.2 mm  
molded-chips-on-board (MCOB) module package with 24  
pinconfigurationpads,offeringsignificantPCBspacesaving  
as compare to conventional discrete design approach.  
Specifications  
Typical Performance at 1.90 GHz (Rx mode)  
 39.5 dB Gain  
The device offers high power protection switch (Tx mode  
operation) with very low insertion loss. During Rx mode  
operation, the receiver chain provides a very low NF and  
high gain that makes it an ideal choice for cellular infra-  
structure in TD-SCDMA and TD-LTE applications.  
 0.80 dB Noise Figure  
 36.4 dBm Output IP3  
Typical Performance at 1.90 GHz (Tx mode)  
 0.27 dB insertion loss  
 40 dB Ant to LNA1 Isolation  
Component Image  
3
Package Size : 8.0 x 8.0 x 1.2 mm  
Vbias Vc 1 Gnd Gnd Gnd  
Tx  
Applications  
Gnd  
Gnd  
Pin 1  
 High power switch LNA module for TD-SCDMA and  
TD-LTE base station front-end RF application.  
AVAGO  
Ant  
Gnd  
12124  
WWYY  
XXXX  
Gnd  
Gnd  
Block Diagram with Simplified Schematic  
Gnd  
Vc 2  
Vg  
Gnd  
Vc1 Vbias  
Vdd2  
Rx Out  
Vdd1  
Gnd  
C6  
C10  
Tx  
LNA2 Gnd Gnd Gnd Gnd LNA1  
_In  
_Out  
External  
50 ohm  
termination  
C7  
C2  
TOP VIEW  
BOTTOM VIEW  
C8  
Note:  
C1  
Package marking provides orientation and identification  
“12124” = Device Part Number  
“WWYY” = Work week and year of manufacture  
“XXXX” = Last 4 digit of lot number  
Ant  
L1  
C5  
Switch bias  
circuitry  
Vc2  
Vg  
PA  
R1  
Rx Out  
C9  
Notes:  
Vdd1  
C3  
1. Enhancement mode technology employs positive Vgs, thereby elimi-  
nating the need of negative gate voltage associated with conven-  
tional depletion mode devices.  
C4  
LNA1_Out  
LNA2_In  

与ALM-12124-BLKG相关器件

型号 品牌 描述 获取价格 数据表
ALM-12124-TR1G AVAGO 50 Watt High Power SPDT Switch with LNA Module

获取价格

ALM-12224 AVAGO 50 Watt High Power SPDT Switch with LNA Module

获取价格

ALM-12224-BLKG AVAGO 50 Watt High Power SPDT Switch with LNA Module

获取价格

ALM-12224-TR1G AVAGO 50 Watt High Power SPDT Switch with LNA Module

获取价格

ALM-1222-BLKG AVAGO 1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT

获取价格

ALM-1222-TR1G AVAGO 1800MHz - 2200MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, 6 X 5 MM, 1.1 MM HEIGHT

获取价格