ALM-12124
1.88 GHz – 2.025 GHz
50 Watt High Power SPDT Switch with LNA Module
Data Sheet
Description
Features
Avago Technologies’ALM-12124 is a multi-chip integrated Very Low Noise Figure
module that comprise of a 50 Watt CW high power SPDT
switch, 1 stage low noise amplifier and 2 stage high
gain driver amplifier through the use of Avago Techno-
High Power Switch design
st
nd
50 dB isolation between LNA1_Out and LNA2_In
3
logies’ proprietary 0.25 m GaAs Enhancement-mode Small package size 8.0 x 8.0 x 1.2 mm
pHEMT process and low distortion silicon PIN diode
technologies.
[1]
GaAs E-pHEMT Technology
Low Distortion Silicon PIN Diode Technology
MSL 2a and Lead-free
3
The ALM-12124 is housed in a compact 8.0 x 8.0 x 1.2 mm
molded-chips-on-board (MCOB) module package with 24
pinconfigurationpads,offeringsignificantPCBspacesaving
as compare to conventional discrete design approach.
Specifications
Typical Performance at 1.90 GHz (Rx mode)
39.5 dB Gain
The device offers high power protection switch (Tx mode
operation) with very low insertion loss. During Rx mode
operation, the receiver chain provides a very low NF and
high gain that makes it an ideal choice for cellular infra-
structure in TD-SCDMA and TD-LTE applications.
0.80 dB Noise Figure
36.4 dBm Output IP3
Typical Performance at 1.90 GHz (Tx mode)
0.27 dB insertion loss
40 dB Ant to LNA1 Isolation
Component Image
3
Package Size : 8.0 x 8.0 x 1.2 mm
Vbias Vc 1 Gnd Gnd Gnd
Tx
Applications
Gnd
Gnd
Pin 1
High power switch LNA module for TD-SCDMA and
TD-LTE base station front-end RF application.
AVAGO
Ant
Gnd
12124
WWYY
XXXX
Gnd
Gnd
Block Diagram with Simplified Schematic
Gnd
Vc 2
Vg
Gnd
Vc1 Vbias
Vdd2
Rx Out
Vdd1
Gnd
C6
C10
Tx
LNA2 Gnd Gnd Gnd Gnd LNA1
_In
_Out
External
50 ohm
termination
C7
C2
TOP VIEW
BOTTOM VIEW
C8
Note:
C1
Package marking provides orientation and identification
“12124” = Device Part Number
“WWYY” = Work week and year of manufacture
“XXXX” = Last 4 digit of lot number
Ant
L1
C5
Switch bias
circuitry
Vc2
Vg
PA
R1
Rx Out
C9
Notes:
Vdd1
C3
1. Enhancement mode technology employs positive Vgs, thereby elimi-
nating the need of negative gate voltage associated with conven-
tional depletion mode devices.
C4
LNA1_Out
LNA2_In