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ADUM4120-1ARIZ-RL PDF预览

ADUM4120-1ARIZ-RL

更新时间: 2022-05-14 22:14:47
品牌 Logo 应用领域
亚德诺 - ADI
页数 文件大小 规格书
17页 308K
描述
Isolated, Precision Gate Drivers with 2 A Output

ADUM4120-1ARIZ-RL 数据手册

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Data Sheet  
ADuM4120/ADuM4120-1  
SPECIFICATIONS  
ELECTRICAL CHARACTERISTICS  
Low-side voltages referenced to GND  
1
. High-side voltages referenced to GND2; 2.5 V ≤ VDD1 ≤ 6.5 V; 4.5 V ≤ VDD2 ≤ 35 V, and T = −40°C  
J
to +125°C. All minimum/maximum specifications apply over the entire recommended operating range, unless otherwise noted. All  
typical specifications are at TJ = 25°C, VDD1 = 5.0 V, and VDD2 = 15 V, unless otherwise noted.  
Table 1.  
Parameter  
Symbol  
Min  
4.5  
2.5  
−1  
Typ  
Max  
Unit  
Test Conditions/Comments  
DC SPECIFICATIONS  
High-Side Power Supply  
VDD2 Input Voltage  
VDD2 Input Current, Quiescent  
Logic Supply  
VDD1 Input Voltage  
Input Current  
Logic Input  
VDD2  
IDD2(Q)  
35  
2.6  
V
mA  
1.7  
VDD1  
IDD1  
VIN  
6.5  
5
V
mA  
3.6  
VIN = high  
VIN Input Current  
Logic Input Voltage  
High  
IVIN  
0.01  
+1  
μA  
VIH  
VIL  
0.7 × VDD1  
3.5  
V
V
V
V
2.5 V ≤ VDD1 ≤ 5 V  
VDD1 > 5 V  
2.5 V ≤ VDD1 ≤ 5 V  
VDD1 > 5 V  
Low  
0.3 × VDD1  
1.5  
Undervoltage Lockout (UVLO)  
VDD1  
Positive Going Threshold  
Negative Going Threshold  
Hysteresis  
VVDD1UV+  
VVDD1UV−  
VVDD1UVH  
2.45  
2.35  
0.1  
2.5  
V
V
V
2.3  
VDD2  
Grade A  
Positive Going Threshold  
Negative Going Threshold  
Hysteresis  
VVDD2UV+  
VVDD2UV−  
VVDD2UVH  
4.4  
4.2  
0.2  
4.5  
V
V
V
4.1  
Grade B  
Positive Going Threshold  
Negative Going Threshold  
Hysteresis  
VVDD2UV+  
VVDD2UV−  
VVDD2UVH  
7.3  
7.1  
0.2  
7.5  
V
V
V
6.9  
Grade C  
Positive Going Threshold  
Negative Going Threshold  
Hysteresis  
VVDD2UV+  
VVDD2UV−  
VVDD2UVH  
11.3  
11.1  
0.2  
11.6  
V
V
V
10.8  
Thermal Shutdown (TSD)  
TSD Positive Edge  
TSD Hysteresis  
TTSD_POS  
TTSD_HYST  
RDSON_N  
155  
30  
°C  
°C  
Ω
Ω
Ω
Ω
A
Internal NMOS Gate Resistance  
0.6  
0.6  
0.8  
0.8  
2.3  
1.6  
1.6  
1.8  
1.8  
Tested at 250 mA, VDD2 = 15 V  
Tested at 1 A, VDD2 = 15 V  
Tested at 250 mA, VDD2 = 15 V  
Tested at 1 A, VDD2 = 15 V  
Internal PMOS Gate Resistance  
Peak Output Current  
RDSON_P  
IPK  
VDD2 = 12 V, 4 Ω gate resistance  
Rev. 0 | Page 3 of 17  
 
 
 

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