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ADR431TRZ-EP-R7

更新时间： 2024-09-25 21:17:47
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亚德诺 - ADI 光电二极管
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8页 130K
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Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

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Low Noise XFET Voltage References with  
Current Sink and Source Capability  
ADR431-EP/ADR434-EP/ADR435-EP  
FEATURES  
PIN CONFIGURATION  
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p @ 2.5 VOUT (ADR431-EP)  
No external capacitor required  
Low temperature coefficient  
T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)  
T Grade: 5 ppm/°C maximum (ADR431-EP)  
Load regulation: 15 ppm/mA  
ADR431-EP/  
ADR434-EP/  
ADR435-EP  
1
2
3
4
8
7
6
5
TP  
TP  
V
COMP  
IN  
V
NC  
OUT  
TOP VIEW  
(Not to Scale)  
TRIM  
GND  
NOTES  
1. NC = NO CONNECT.  
2. TP = TEST PIN (DO NOT CONNECT).  
Line regulation: 20 ppm/V  
Wide operating range: 4.5 V to 18 V (ADR431-EP)  
High output source and sink current: +10 mA and −10 mA  
Figure 1. 8-Lead SOIC_N (R-8)  
ENHANCED PRODUCT FEATURES  
Supports defense and aerospace applications (AQEC  
standard)  
Military temperature range (−55°C to +125°C)  
Controlled manufacturing baseline  
One assembly/test site  
One fabrication site  
Enhanced product change notification  
Qualification data available on request  
APPLICATIONS  
Precision data acquisition systems  
High resolution data converters  
Optical control circuits  
Precision instruments  
GENERAL DESCRIPTION  
The ADR431-EP/ADR434-EP/ADR435-EP have the capability  
to source up to 10 mA of output current and sink up to −10 mA.  
They also come with a trim terminal to adjust the output  
voltage over a 0.5% range without compromising performance.  
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage  
references featuring low noise, high accuracy, and low temperature  
drift performance. Using Analog Devices, Inc., patented temperature  
drift curvature correction and XFET (eXtra implanted junction  
FET) technology, voltage change vs. temperature nonlinearity in  
the ADR431-EP/ADR434-EP/ADR435-EP is minimized.  
The ADR431-EP/ADR434-EP/ADR435-EP are available in an  
8-lead narrow SOIC package and are specified over the military  
temperature range of −55°C to +125°C.  
The XFET references operate at lower current (800 μA) and  
lower supply voltage headroom (2 V) than buried Zener  
references. Buried Zener references require more than 5 V  
headroom for operation. The ADR431-EP/ADR434-EP/  
ADR435-EP XFET references are optimal low noise solutions  
for 5 V systems.  
Additional application and technical information can be found  
in the ADR430/ADR431/ADR433/ADR434/ADR435/ADR439  
data sheet.  
Table 1. Selection Guide  
Output  
Voltage (V) (mV)  
Accuracy Temperature  
Model  
Coefficient (ppm/°C)  
ADR431T-EP 2.500  
ADR434T-EP 4.096  
ADR435T-EP 5.000  
1.0  
1.5  
2.0  
5
3
3
Rev. A  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700  
Fax: 781.461.3113  
www.analog.com  
©2010 Analog Devices, Inc. All rights reserved.  
 
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