Datasheet > ADPA7002CHIP

ADPA7002CHIP

更新时间： 2024-01-25 14:07:32

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
23页	565K
描述
GaAs, pHEMT, MMIC,1/2 W, Power Amplifier

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ADPA7002CHIP 数据手册

GaAs, pHEMT, MMIC,1/2 W,

20 GHz to 44 GHz, Power Amplifier

Data Sheet

ADPA7002CHIP

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz)

VREF

P_SAT: 30 dBm (typical at 20 GHz to 34 GHz)

ADPA7002CHIP

Gain: 15 dB (typical at 34 GHz to 44 GHz)

IP3: 40 dBm (typical)

Supply voltage: 5 V at 600 mA

Die size: 2.75 mm × 1.805 mm × 0.1 mm

RFIN

GND

RFOUT

VDET

APPLICATIONS

Military and space

Test instrumentation

DD1

DD2A

GG1

DD2B

Figure 1.

GENERAL DESCRIPTION

The ADPA7002CHIP is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), distributed power

amplifier that operates from 20 GHz to 44 GHz. The amplifier

provides 15 dB of small signal gain, 28 dBm output power at

1 dB gain compression (P1dB), and a typical output third-order

intercept (IP3) of 40 dBm. The amplifier requires 600 mA from

a 5 V supply on V_DD2A, V_DD2B, and V_DD1. The ADPA7002CHIP

also features inputs/outputs (I/Os) that are internally matched to

50 Ω, and facilitates integration into multichip modules (MCMs).

All data is taken with the on substrate chip connected via two

wire bonds that are 0.025 mm (1 mil) wide and 0.31 mm (12 mils)

long.

Rev. 0

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rights of third parties that may result from its use. Specifications subject to change without notice.

No license is granted by implication or otherwise under any patent or patent rights of Analog

Devices.Trademarks and registered trademarks are theproperty of their respective owners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

Technical Support

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