5秒后页面跳转
ADP3415LRM-REEL7 PDF预览

ADP3415LRM-REEL7

更新时间: 2024-02-29 10:32:40
品牌 Logo 应用领域
亚德诺 - ADI 驱动器接口集成电路光电二极管
页数 文件大小 规格书
12页 163K
描述
Dual MOSFET Driver with Bootstrapping

ADP3415LRM-REEL7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP, TSSOP10,.19,20
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.4高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:S-PDSO-G10
长度:3 mm湿度敏感等级:1
功能数量:1端子数量:10
最高工作温度:100 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP10,.19,20封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):225
电源:5 V认证状态:Not Qualified
座面最大高度:1.1 mm子类别:MOSFET Drivers
标称供电电压:5 V表面贴装:YES
温度等级:OTHER端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
Base Number Matches:1

ADP3415LRM-REEL7 数据手册

 浏览型号ADP3415LRM-REEL7的Datasheet PDF文件第5页浏览型号ADP3415LRM-REEL7的Datasheet PDF文件第6页浏览型号ADP3415LRM-REEL7的Datasheet PDF文件第7页浏览型号ADP3415LRM-REEL7的Datasheet PDF文件第9页浏览型号ADP3415LRM-REEL7的Datasheet PDF文件第10页浏览型号ADP3415LRM-REEL7的Datasheet PDF文件第11页 
ADP3415  
THEORY OF OPERATION  
overlap protection circuit waits for the voltage at the SW pin to  
fall from VDCIN to 1.6 V. Once the voltage on the SW pin has  
fallen to 1.6 V, Q2 will begin to turn ON. By waiting for the  
voltage on the SW pin to reach 1.6 V, the overlap protection  
circuit ensures that Q1 is OFF before Q2 turns on, regardless of  
variations in temperature, supply voltage, gate charge, and drive  
current. There is, however, a timeout circuit that will override  
the waiting period for the SW pin to reach 1.6 V. After the  
timeout period has expired, DRVL will be asserted regardless of  
the SW voltage.  
The ADP3415 is a dual MOSFET driver optimized for driving  
two N-channel FETs in a synchronous buck converter topology.  
A single duty ratio modulation signal is all that is required to  
command the proper drive signal for the high-side and the  
low-side FETs.  
A more detailed description of the ADP3415 and its features  
follows. Refer to the Functional Block Diagram (Figure 2).  
Drive State Input  
The drive state input, IN, should be connected to the duty ratio  
modulation signal of a switch-mode controller. IN can be driven  
by 2.5 V to 5.0 V logic. The FETs will be driven so that the SW  
node follows the polarity of IN.  
To prevent the overlap of the gate drives during Q2s turn OFF  
and Q1s turn ON, the overlap circuit provides a programmable  
delay that is set by a resistor on the DLY pin. When IN goes  
high, Q2 will begin to turn OFF (after a propagation delay), but  
before Q1 can turn ON, the overlap protection circuit waits for  
the voltage at DRVL to go low. Once the voltage at DRVL is  
low, the overlap protection circuit initiates a delay timer that is  
programmed by the external resistor RDLY. The delay resistor  
adds an additional specified delay. The delay allows time for  
current to commutate from the body diode of Q2 to an external  
Schottky diode, which allows turn-off losses to be reduced.  
Although not as foolproof as the adaptive delay, the program-  
mable delay adds a safety margin to account for variations in size,  
gate charge, and internal delay of the external power MOSFETs.  
Low-Side Driver  
The supply rails for the low-side driver, DRVL, are VCC and  
GND. In its conventional application, it drives the gate of the  
synchronous rectifier FET.  
When the driver is enabled, the drivers output is 180° out of  
phase with the duty ratio input aside from overlap protection  
circuit, propagation, and transition delays. When the driver is  
shut down or the entire ADP3415 is in shutdown or in under-  
voltage lockout, the low-side gate is held low.  
High-Side Driver  
Low-Side Driver Shutdown  
The supply rail for the high-side driver, DRVH, is between the  
BST and SW pins and is created by an external bootstrap sup-  
ply circuit. In its conventional application, it drives the gate of  
the (top) main buck converter FET.  
The low-side driver shutdown, DRVLSD, allows a control  
signal to shut down the synchronous rectifier. This signal should  
be modulated by system state logic to achieve maximum battery  
life under light load conditions and maximum efficiency under  
heavy load conditions. Under heavy load conditions, DRVLSD  
should be high so that the synchronous switch is modulated for  
maximum efficiency. Under light load conditions, DRVLSD  
should be low to prevent needless switching losses due to charge  
shuttling caused by polarity reversal of the inductor current  
when the average current is low.  
The bootstrap circuit comprises a Schottky diode, DBST, and  
bootstrap capacitor, CBST. When the ADP3415 is starting up,  
the SW pin is at ground, so the bootstrap capacitor will charge  
up to VCC through DBST. As the supply voltage ramps up and  
exceeds the UVLO threshold, the driver is enabled. When the  
input pin, IN, goes high, the high-side driver will begin to turn  
the high-side FET (Q1) ON by transferring charge from CBST to  
the gate of the FET. As Q1 turns ON, the SW pin will rise up to  
When the DRVLSD input is low, the low-side driver stays low.  
When the DRVLSD input is high, the low-side driver is enabled  
and controlled by the driver signals as previously described.  
V
DCIN, forcing the BST pin to VDCIN + VC(BST), which is enough  
gate to source voltage to hold Q1 ON. To complete the cycle,  
when IN goes low, Q1 is switched OFF as DRVH discharges  
the gate to the voltage at the SW pin. When the low-side FET,  
Q2, turns ON, the SW pin is held at ground. This allows the  
bootstrap capacitor to charge up to VCC again.  
Low-Side Driver Timeout Circuit  
In normal operation, the DRVH signal tracks the IN signal  
and turns OFF the Q1 high-side switch with a few tens of ns  
tpdlDRVH delay following the falling edge of the input signal.  
When Q1 is turned OFF, then DRVL is allowed to go high,  
Q2 to turn ON, and the SW node voltage to collapse to zero.  
But in a faulty scenario, such as the case of a high-side Q1  
switch drain-source short circuit when even DRVH goes low,  
the SW node cannot fall to zero.  
The high-side drivers output is in phase with the duty ratio  
input. When the driver is in undervoltage lockout, the high-side  
gate is held low.  
Overlap Protection Circuit  
The overlap protection circuit (OPC) prevents both of the main  
power switches, Q1 and Q2, from being ON at the same time.  
This prevents excessive shoot-through currents from flowing  
through both power switches and minimizes the associated  
losses that can occur during their ON-OFF transitions. The  
overlap protection circuit accomplishes this by adaptively  
controlling the delay from Q1s turn OFF to Q2s turn ON and  
by programming the delay from Q2s turn OFF to Q1s turn ON.  
The ADP3415 has a timer circuit to address this scenario. Every  
time the IN goes low, a DRVL on-time delay timer gets trig-  
gered (see Figure 2). Should the SW node voltage not trigger  
the low side turn-on, the DRVL on-time delay circuit will do it  
instead, when it times out with tSWTO delay (see Figure 5). If the  
high-side Q1 is still turned ON, i.e., its drain is shorted to the  
source, the low-side Q2 turn-on will create a direct short circuit  
across the VDCIN voltage rail, and the crowbar action will blow  
the fuse in the VDCIN current patch. The opening of the fuse saves  
the load (CPU) from potential damage that the high-side switch  
short circuit could have caused.  
To prevent the overlap of the gate drives during Q1s turn OFF  
and Q2s turn ON, the overlap circuit monitors the voltage at  
the SW pin. When IN goes low, Q1 will begin to turn OFF  
(after a propagation delay), but before Q2 can turn ON, the  
–8–  
REV. B  

与ADP3415LRM-REEL7相关器件

型号 品牌 描述 获取价格 数据表
ADP3415LRMZ-REEL ADI Dual MOSFET Driver with Bootstrapping

获取价格

ADP3415LRMZ-REEL ONSEMI Dual MOSFET Driver with Bootstrapping

获取价格

ADP3415LRMZ-RL7 ONSEMI Dual MOSFET Driver with Bootstrapping

获取价格

ADP3416 ADI Dual Bootstrapped MOSFET Driver

获取价格

ADP3416JR ADI Dual Bootstrapped MOSFET Driver

获取价格

ADP3416JR ROCHESTER 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PDSO8, MS-012AA, SOIC-8

获取价格