Datasheet > 驱动程序和接口 > MOSFET 驱动器> ADP3120AJRZ

ADP3120AJRZ

更新时间： 2024-01-15 12:19:45

品牌	Logo	应用领域
安森美 - ONSEMI		驱动器接口集成电路光电二极管
页数	文件大小	规格书
8页	128K
描述
Dual Bootstrapped, 12 V MOSFET Driver with Output Disable

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ADP3120AJRZ 数据手册

ADP3120A

MAXIMUM RATINGS

Rating

Value

0 to 85

0 to 150

Unit

°C

Operating Ambient Temperature, T

Operating Junction Temperature, T (Note 1)

°C

Package Thermal Resistance: SO−8

Junction−to−Case, R

123

°C/W

Junction−to−Ambient, R

(2−Layer Board)

Package Thermal Resistance: DFN8 (Note 2)

Junction−to−Case, R (From die to exposed pad)

7.5

°C/W

Junction−to−Ambient, R

Storage Temperature Range, T

−65 to 150

260 peak

°C

−

Lead Temperature Soldering (10 sec): Reflow (SMD styles only)

JEDEC Moisture Sensitivity Level

Pb−Free (Note 3)

SO−8 (260 peak profile)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Internally limited by thermal shutdown, 150°C min.

2. 2 layer board, 1 in Cu, 1 oz thickness.

3. 60−180 seconds minimum above 237°C.

NOTE: This device is ESD sensitive. Use standard ESD precautions when handling.

MAXIMUM RATINGS

Pin Symbol

Pin Name

Main Supply Voltage Input

Ground

MIN

MAX

15 V

0 V

−0.3 V

0 V

PGND

BST

Bootstrap Supply Voltage Input

35 V wrt/PGND

40 V < 50 ns wrt/PGND

15 V wrt/SW

−0.3 V wrt/SW

Switching Node

(Bootstrap Supply Return)

35 V

40 V < 50 ns

−5.0 V

−10 V < 200 ns

DRVH

DRVL

High−Side Driver Output

BST + 0.3 V

−0.3 V wrt/SW

−2.0 V < 200 ns wrt/SW

Low−Side Driver Output

+ 0.3 V

−0.3 V DC

−5.0 V < 200 ns

DRVH and DRVL Control Input

Output Disable

6.5 V

−0.3 V

NOTE: All voltages are with respect to PGND except where noted.

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