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ADM8691ARW-REEL

更新时间： 2024-02-19 07:06:35
品牌 Logo 应用领域
亚德诺 - ADI 微处理器监控
页数 文件大小 规格书
16页 209K
描述
2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO16, MS-013AA, SOIC-16

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ADM8691ARW-REEL 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP, SOP16,.4针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：1.3
其他特性：RESET THRESHOLD VOLTAGE IS 4.65V可调阈值：NO
模拟集成电路 - 其他类型：POWER SUPPLY MANAGEMENT CIRCUITJESD-30 代码：R-PDSO-G16
JESD-609代码：e3长度：10.3 mm
湿度敏感等级：1信道数量：2
功能数量：1端子数量：16
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP16,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
座面最大高度：2.65 mm子类别：Power Management Circuits
最大供电电流 (Isup)：0.2 mA最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.75 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
宽度：7.5 mmBase Number Matches：1

ADM8691ARW-REEL 数据手册

 浏览型号ADM8691ARW-REEL的Datasheet PDF文件第2页浏览型号ADM8691ARW-REEL的Datasheet PDF文件第3页浏览型号ADM8691ARW-REEL的Datasheet PDF文件第4页浏览型号ADM8691ARW-REEL的Datasheet PDF文件第6页浏览型号ADM8691ARW-REEL的Datasheet PDF文件第7页浏览型号ADM8691ARW-REEL的Datasheet PDF文件第8页 
ADM8690–ADM8695  
P IN CO NFIGURATIO NS  
V
1
2
3
4
5
6
7
8
16 RESET  
RESET  
BATT  
V
V
BATT  
1
2
3
4
8
7
6
5
15  
OUT  
V
OUT  
ADM8690  
ADM8692  
ADM8694  
ADM8691  
ADM8693  
ADM8695  
TOP VIEW  
(Not to Scale)  
V
RESET  
WDI  
CC  
V
14 WDO  
CC  
GND  
PFI  
GND  
13 CE  
IN  
TOP VIEW  
(Not to Scale)  
PFO  
BATT ON  
CE  
OUT  
12  
11  
10  
9
WDI  
PFO  
PFI  
LOW LINE  
OSC IN  
OSC SEL  
P RO D UCT SELECTIO N GUID E  
P art  
Num ber  
Nom inal Reset  
Tim e  
Nom inal VCC  
Reset Threshold  
Nom inal Watchdog  
Tim eout P eriod  
Battery Backup  
Switching  
Base D rive  
Ext P NP  
Chip Enable  
Signals  
ADM8690  
ADM8691  
ADM8692  
ADM8693  
ADM8694  
ADM8695  
50 ms  
50 ms or ADJ  
50 ms  
50 ms or ADJ  
200 ms  
200 ms or ADJ  
4.65 V  
4.65 V  
4.4 V  
4.4 V  
4.65 V  
4.65 V  
1.6 s  
Yes  
Yes  
Yes  
Yes  
Yes  
Yes  
No  
Yes  
No  
Yes  
No  
Yes  
No  
Yes  
No  
Yes  
No  
Yes  
100 ms, 1.6 s, ADJ  
1.6 s  
100 ms, 1.6 s, ADJ  
1.6 s  
100 ms, 1.6 s, ADJ  
CIRCUIT INFO RMATIO N  
Batter y Switchover Section  
If the continuous output current requirement at VOUT exceeds  
100 mA, or if a lower VCC–VOUT voltage differential is desired,  
an external PNP pass transistor may be connected in parallel with  
the internal transistor. T he BAT T ON output (ADM8691/  
ADM8693/ADM8695) can directly drive the base of the exter-  
nal transistor.  
T he battery switchover circuit compares VCC to the VBAT T  
input, and connects VOUT to whichever is higher. Switchover  
occurs when VCC is 50 mV higher than VBAT T as VCC falls, and  
when VCC is 70 mV greater than VBAT T as VCC rises. T his  
20 mV of hysteresis prevents repeated rapid switching if VCC  
falls very slowly or remains nearly equal to the battery voltage.  
A 7 Ω MOSFET switch connects the VBAT T input to VOUT dur-  
ing battery backup. T his MOSFET has very low input-to-out-  
put differential (dropout voltage) at the low current levels  
required for battery back up of CMOS RAM or other low power  
CMOS circuitry. T he supply current in battery back up is typi-  
cally 0.4 µA.  
V
CC  
V
OUT  
V
BATT  
T he ADM8690/ADM8691/ADM8694/ADM8695 operates with  
battery voltages from 2.0 V to 4.25 V, and the ADM8692/  
ADM8693 operates with battery voltages from 2.0 V to 4.0 V.  
High value capacitors, either standard electrolytic or the farad  
size double layer capacitors, can also be used for short-term  
memory backup. A small charging current of typically 10 nA  
(0.1 µA max) flows out of the VBAT T terminal. T his current is  
useful for maintaining rechargeable batteries in a fully charged  
condition. T his extends the life of the backup battery by com-  
pensating for its self discharge current. Also note that this cur-  
rent poses no problem when lithium batteries are used for  
backup since the maximum charging current (0.1 µA) is safe for  
even the smallest lithium cells.  
GATE DRIVE  
100  
mV  
BATT ON  
(ADM8690,  
ADM8695)  
INTERNAL  
SHUTDOWN SIGNAL  
WHEN  
700  
mV  
V
> (V + 0.7V)  
BATT  
CC  
Figure 1. Battery Switchover Schem atic  
During normal operation, with VCC higher than VBAT T, VCC is  
internally switched to VOUT via an internal PMOS transistor  
switch. T his switch has a typical on-resistance of 0.7 Ω and can  
supply up to 100 mA at the VOUT terminal. VOUT is normally  
used to drive a RAM memory bank which may require instanta-  
neous currents of greater than 100 mA. If this is the case then a  
bypass capacitor should be connected to VOUT . T he capacitor  
will provide the peak current transients to the RAM. A capaci-  
tance value of 0.1 µF or greater may be used.  
If the battery switchover section is not used, VBAT T should be  
connected to GND and VOUT should be connected to VCC  
.
REV. 0  
–5–  
12345678...16

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