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ADM1032ARM-1RL7 PDF预览

ADM1032ARM-1RL7

更新时间: 2024-01-21 23:44:46
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
18页 197K
描述
SPECIALTY ANALOG CIRCUIT, PDSO8, MO-187AA, MSOP-8

ADM1032ARM-1RL7 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:MO-187AA, MSOP-8
针数:8Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.04
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:S-PDSO-G8
长度:3 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:120 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:SQUARE封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):225认证状态:Not Qualified
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES温度等级:OTHER
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3 mmBase Number Matches:1

ADM1032ARM-1RL7 数据手册

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ADM1032  
In this respect, the ADM1032 differs from and improves  
If a discrete transistor is being used with the ADM1032,  
the best accuracy is obtained by choosing devices according  
to the following criteria:  
Base-emitter Voltage Greater than 0.25 V at 6 mA, at  
the Highest Operating Temperature  
upon competitive devices that output zero if the external  
sensor goes short-circuit. These devices can misinterpret a  
genuine 0°C measurement as a fault condition.  
When the D+ and Dlines are shorted together, an  
ALERT is always generated. This is because the remote  
value register reports a temperature value of 128°C. Since  
the ADM1032 performs a less-than or equal-to comparison  
with the low limit, an ALERT is generated even when the  
low limit is set to its minimum of 128°C.  
Base-emitter Voltage Less than 0.95 V at 100 mA, at  
the Lowest Operating Temperature  
Base Resistance Less than 100 W  
Small Variation in h (say 50 to 150) that Indicates  
FE  
Tight Control of V Characteristics  
BE  
Applications Information Factors Affecting  
Accuracy  
Transistors such as 2N3904, 2N3906, or equivalents in  
SOT23 packages are suitable devices to use.  
Remote Sensing Diode  
Thermal Inertia and Self-heating  
The ADM1032 is designed to work with substrate  
transistors built into processors’ CPUs or with discrete  
transistors. Substrate transistors are generally PNP types  
with the collector connected to the substrate. Discrete types  
can be either a PNP or an NPN transistor connected as a  
diode (base shorted to collector). If an NPN transistor is  
used, the collector and base are connected to D+ and the  
emitter to D. If a PNP transistor is used, the collector and  
base are connected to Dand the emitter to D+. Substrate  
transistors are found in a number of CPUs. To reduce the  
error due to variations in these substrate and discrete  
transistors, a number of factors should be taken into  
consideration:  
Accuracy depends on the temperature of the  
remote-sensing diode and/or the internal temperature sensor  
being at the same temperature as that being measured, and  
a number of factors can affect this. Ideally, the sensor should  
be in good thermal contact with the part of the system being  
measured, for example, the processor. If it is not, the thermal  
inertia caused by the mass of the sensor causes a lag in the  
response of the sensor to a temperature change. In the case  
of the remote sensor, this should not be a problem, since it  
is either a substrate transistor in the processor or a small  
package device, such as the SOT23, placed in close  
proximity to it.  
The on-chip sensor, however, is often remote from the  
processor and is only monitoring the general ambient  
temperature around the package. The thermal time constant  
of the SOIC8 package in still air is about 140 seconds, and  
if the ambient air temperature quickly changed by 100°, it  
would take about 12 minutes (five time constants) for the  
junction temperature of the ADM1032 to settle within 1° of  
this. In practice, the ADM1032 package is in electrical and  
therefore thermal contact with a printed circuit board and  
can also be in a forced airflow. How accurately the  
temperature of the board and/or the forced airflow reflect the  
temperature to be measured also affects the accuracy.  
Self-heating due to the power dissipated in the ADM1032  
or the remote sensor causes the chip temperature of the  
device or remote sensor to rise above ambient. However, the  
current forced through the remote sensor is so small that  
self-heating is negligible. In the case of the ADM1032, the  
worst-case condition occurs when the device is converting  
at 16 conversions per second while sinking the maximum  
current of 1 mA at the ALERT and THERM output. In this  
case, the total power dissipation in the device is about  
1. The ideality factor, n , of the transistor. The  
f
ideality factor is a measure of the deviation of the  
thermal diode from the ideal behavior. The  
ADM1032 is trimmed for an n value of 1.008.  
f
The following equation can be used to calculate  
the error introduced at a temperature T°C when  
using a transistor whose n does not equal 1.008.  
f
Consult the processor data sheet for n values.  
f
ǒn  
* 1.008Ǔ  
1.008  
natural  
ǒ Ǔ  
  273.15 Kelvin ) T  
DT +  
(eq. 2)  
This value can be written to the offset register and  
is automatically added to or subtracted from the  
temperature measurement.  
2. Some CPU manufacturers specify the high and  
low current levels of the substrate transistors. The  
high current level of the ADM1032, I  
, is  
HIGH  
230 mA and the low level current, I , is 13 mA.  
LOW  
If the ADM1032 current levels do not match the  
levels of the CPU manufacturers, then it can  
become necessary to remove an offset. The CPU’s  
data sheet advises whether this offset needs to be  
removed and how to calculate it. This offset can be  
programmed to the offset register. It is important  
to note that if accounting for two or more offsets is  
needed, then the algebraic sum of these offsets  
must be programmed to the offset register.  
11 mW. The thermal resistance, q , of the SOIC8 package  
JA  
is about 121°C/W.  
In practice, the package has electrical and therefore  
thermal connection to the printed circuit board, so the  
temperature rise due to self-heating is negligible.  
http://onsemi.com  
14  

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