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ADM1032AR PDF预览

ADM1032AR

更新时间: 2024-02-22 02:36:02
品牌 Logo 应用领域
亚德诺 - ADI 监控
页数 文件大小 规格书
12页 166K
描述
+-1C Remote and Local System Temperature Monitor

ADM1032AR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5
Is Samacsys:N其他特性:PROGRAMMABLE OVER/UNDER TEMPERATURE LIMIT
模拟集成电路 - 其他类型:ANALOG CIRCUITJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:8最高工作温度:120 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

ADM1032AR 数据手册

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ADM1032  
FUNCTIONAL DESCRIPTION  
Figure 2 shows the input signal conditioning used to measure  
the output of an external temperature sensor. This figure shows  
the external sensor as a substrate transistor, provided for tem-  
perature monitoring on some microprocessors, but it could  
equally well be a discrete transistor. If a discrete transistor is  
used, the collector will not be grounded, and should be linked to  
the base. To prevent ground noise interfering with the measure-  
ment, the more negative terminal of the sensor is not referenced  
to ground, but is biased above ground by an internal diode at  
the D– input. If the sensor is operating in a noisy environment,  
C1 may optionally be added as a noise filter. Its value is typi-  
cally 2200 pF, but should be no more than 3000 pF. See the  
section on Layout Considerations for more information on C1.  
The ADM1032 is a local and remote temperature sensor and  
over-temperature alarm. When the ADM1032 is operating  
normally, the on-board A-to-D converter operates in a free-  
running mode. The analog input multiplexer alternately selects  
either the on-chip temperature sensor to measure its local tem-  
perature, or the remote temperature sensor. These signals are  
digitized by the ADC and the results stored in the Local and  
Remote Temperature Value Registers.  
The measurement results are compared with local and remote,  
high, low and THERM temperature limits, stored in nine on-  
chip registers. Out-of-limit comparisons generate flags that are  
stored in the Status Register, and one or more out-of limit results  
will cause the ALERT output to pull low. Exceeding THERM  
temperature limits cause the THERM output to assert low.  
To measure VBE, the sensor is switched between operating cur-  
rents of I and N × I. The resulting waveform is passed through  
a 65 kHz low-pass filter to remove noise, thence to a chopper-  
stabilized amplifier that performs the functions of amplification  
and rectification of the waveform to produce a dc voltage pro-  
portional to VBE. This voltage is measured by the ADC to give  
a temperature output in two’s complement format. To further  
reduce the effects of noise, digital filtering is performed by aver-  
aging the results of 16 measurement cycles.  
The limit registers can be programmed, and the device con-  
trolled and configured, via the serial System Management Bus  
(SMBus). The contents of any register can also be read back via  
the SMBus.  
Control and configuration functions consist of:  
Switching the device between normal operation and  
standby mode.  
Signal conditioning and measurement of the internal tempera-  
ture sensor is performed in a similar manner.  
Masking or enabling the ALERT output.  
Selecting the conversion rate.  
TEMPERATURE DATA FORMAT  
MEASUREMENT METHOD  
One LSB of the ADC corresponds to 0.125°C, so the ADC can  
measure from 0°C to 127.875°C. The temperature data format  
is shown in Tables I and II.  
A simple method of measuring temperature is to exploit the  
negative temperature coefficient of a diode, or the base-emitter  
voltage of a transistor, operated at constant current. Unfortu-  
nately, this technique requires calibration to null out the effect  
of the absolute value of VBE, which varies from device to device.  
The results of the local and remote temperature measurements  
are stored in the Local and Remote Temperature Value Registers,  
and are compared with limits programmed into the Local and  
Remote High and Low Limit Registers.  
The technique used in the ADM1032 is to measure the change  
in VBE when the device is operated at two different currents.  
Table I. Temperature Data Format (Local Temperature and  
Remote Temperature High Byte)  
This is given by:  
KT  
Temperature  
Digital Output  
VBE = n  
× In N  
(
)
(
)
f
q
0°C  
1°C  
0 000 0000  
0 000 0001  
0 000 1010  
0 001 1001  
0 011 0010  
0 100 1011  
0 110 0100  
0 111 1101  
0 111 1111  
where:  
K is Boltzmann’s constant (1.38 × 10–23).  
10°C  
25°C  
50°C  
75°C  
100°C  
125°C  
127°C  
q is charge on the electron (1.6 × 10–19 Coulombs).  
T is absolute temperature in Kelvins.  
N is ratio of the two currents.  
nf is the ideality factor of the thermal diode.  
The ADM1032 is trimmed for an ideality factor of 1.008.  
V
DD  
I
N I  
I
BIAS  
D+  
C1*  
D–  
V
OUT+  
TO ADC  
REMOTE  
SENSING  
TRANSISTOR  
V
BIAS  
DIODE  
OUT–  
LOW-PASS FILTER  
fC = 65kHz  
*CAPACITOR C1 IS OPTIONAL. IT SHOULD ONLY BE USED IN NOISY ENVIRONMENTS.  
C1 = 2.2nF TYPICAL, 3nF MAX.  
Figure 2. Input Signal Conditioning  
–5–  
REV. 0  

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