ADF7012

更新时间： 2024-01-30 00:21:59

品牌	Logo	应用领域
亚德诺 - ADI		ISM频段
页数	文件大小	规格书
28页	893K
描述
Multichannel ISM Band FSK/GFSK/OOK/GOOK/ASK Transmitter

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技术参数
数据手册

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ADF7012 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TSSOP
包装说明：	TSSOP,	针数：	24
Reach Compliance Code：	unknown	风险等级：	5.07
Is Samacsys：	N	JESD-30 代码：	R-PDSO-G24
JESD-609代码：	e3	长度：	7.8 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	24	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
认证状态：	COMMERCIAL	座面最大高度：	1.2 mm
标称供电电压：	3 V	表面贴装：	YES
电信集成电路类型：	TELECOM CIRCUIT	温度等级：	INDUSTRIAL
端子面层：	MATTE TIN	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	4.4 mm
Base Number Matches：	1

ADF7012 数据手册

ADF7012

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C, unless otherwise noted.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those listed in the operational sections

of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

Table 3.

Parameter

Rating

DV_DDto GND

(GND = AGND = DGND = 0 V)

−0.3 V to +3.9 V

Digital I/O Voltage to GND

Analog I/O Voltage to GND

Operating Temperature Range

Maximum Junction Temperature

TSSOP θ_JAThermal Impedance

Lead Temperature, Soldering

Vapor Phase (60 sec)

−0.3 V to DV_DD+ 0.3 V

150°C

150.4°C/W

This device is a high performance RF integrated circuit with an

ESD rating of 1 kV and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

215°C

220°C

Infrared (15 sec)

TRANSISTOR COUNT

35819 (CMOS)

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on

the human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. 0 | Page 6 of 28

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