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ADF4217 PDF预览

ADF4217

更新时间: 2024-02-04 16:52:38
品牌 Logo 应用领域
亚德诺 - ADI 射频
页数 文件大小 规格书
20页 220K
描述
Dual RF PLL Frequency Synthesizers

ADF4217 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:MO-153AC, TSSOP-20
针数:20Reach Compliance Code:not_compliant
ECCN代码:5A991.BHTS代码:8542.39.00.01
风险等级:5.87其他特性:ALSO REQUIRES A 3V TO 5.5V SUPPLY
模拟集成电路 - 其他类型:PLL FREQUENCY SYNTHESIZERJESD-30 代码:R-PDSO-G20
JESD-609代码:e0长度:6.5 mm
湿度敏感等级:1功能数量:1
端子数量:20最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP20,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):240电源:3/5 V
认证状态:Not Qualified座面最大高度:1.2 mm
子类别:PLL or Frequency Synthesis Circuits最大供电电流 (Isup):10 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.6 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn85Pb15)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:4.4 mm

ADF4217 数据手册

 浏览型号ADF4217的Datasheet PDF文件第1页浏览型号ADF4217的Datasheet PDF文件第2页浏览型号ADF4217的Datasheet PDF文件第3页浏览型号ADF4217的Datasheet PDF文件第5页浏览型号ADF4217的Datasheet PDF文件第6页浏览型号ADF4217的Datasheet PDF文件第7页 
ADF4216/ADF4217/ADF4218  
(VDD1 = VDD2 = 3 V ؎ 10%, 5 V ؎ 10%; VP1, VP2 = VDD , 5 V ؎ 10%; AGND = DGND = 0 V;  
TA = TMIN to TMAX unless otherwise noted.)  
TIMING CHARACTERISTICS  
Limit at  
T
MIN to TMAX  
Parameter  
(B Version)  
Unit  
Test Conditions/Comments  
t1  
t2  
t3  
t4  
t5  
t6  
10  
10  
25  
25  
10  
20  
ns min  
ns min  
ns min  
ns min  
ns min  
ns min  
DATA to CLOCK Setup Time  
DATA to CLOCK Hold Time  
CLOCK High Duration  
CLOCK Low Duration  
CLOCK to LE Setup Time  
LE Pulsewidth  
NOTES  
Guaranteed by design but not production tested.  
Specification subject to change without notice.  
t
t
4
3
CLOCK  
t
t
2
1
DB1  
(CONTROL BIT C2)  
DB0 (LSB)  
(CONTROL BIT C1)  
DATA  
DB21 (MSB)  
DB20  
DB2  
t
6
LE  
LE  
t
5
Figure 1. Timing Diagram  
Lead Temperature, Soldering  
ABSOLUTE MAXIMUM RATINGS1, 2  
(TA = 25°C unless otherwise noted)  
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215°C  
VDD1 to GND3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V  
DD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V  
VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V  
VP1, VP2 to VDD . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V  
Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V  
Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V  
REFIN, RFINA, RFINB,  
IFINA, IFINB to GND . . . . . . . . . . . –0.3 V to VDD + 0.3 V  
Operating Temperature Range  
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C  
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C  
Maximum Junction Temperature . . . . . . . . . . . . . . . . 150°C  
TSSOP θJA Thermal Impedance . . . . . . . . . . . . . 150.4°C/W  
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C  
V
NOTES  
1Stresses above those listed under Absolute Maximum Ratings may cause perma-  
nent damage to the device. This is a stress rating only; functional operation of the  
device at these or any other conditions above those listed in the operational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditions for extended periods may affect device reliability.  
2This device is a high-performance RF integrated circuit with an ESD rating of  
< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling  
and assembly.  
1
3GND = AGND = DGND = 0 V.  
TRANSISTOR COUNT  
11749 (CMOS) and 522 (Bipolar).  
ORDERING GUIDE  
Model  
Temperature Range  
Package Description  
Package Option*  
ADF4216BRU  
ADF4217BRU  
ADF4218BRU  
–40°C to +85°C  
–40°C to +85°C  
–40°C to +85°C  
Thin Shrink Small Outline Package (TSSOP)  
Thin Shrink Small Outline Package (TSSOP)  
Thin Shrink Small Outline Package (TSSOP)  
RU-20  
RU-20  
RU-20  
*Contact the factory for chip availability.  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection. Although  
the ADF4216/ADF4217/ADF4218 features proprietary ESD protection circuitry, permanent  
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper  
ESD precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
–4–  
REV. 0  

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