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ADA-4789 PDF预览

ADA-4789

更新时间: 2024-01-15 03:28:51
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器
页数 文件大小 规格书
13页 385K
描述
Silicon Bipolar Darlington Amplifier Small Signal Gain Amplifier

ADA-4789 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:TO-243
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.77
Base Number Matches:1

ADA-4789 数据手册

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[1]  
Table 1. Absolute Maximum Ratings at Tc = +25°C  
Typical Biasing Configuration  
Symbol  
Id  
Parameter  
Unit  
MaxRating  
VCC =5 V  
VCC - V d  
RC  
=
Device Current  
mA  
90  
Id  
R
C
c
bypass  
Pdiss  
Pin max  
Tj  
Total Power Dissipation[2] mW  
370  
RF Input Power  
dBm  
0C  
0C  
20  
RFC  
Junction Temperature  
Storage Temperature  
Thermal Resistance[3]  
150  
C
block  
Tstg  
qjc  
-65 to 150  
50  
RF  
input  
3Tx  
RF  
output  
0C/W  
V
d = 3.8 V  
C
block  
Notes:  
1. Operation in excess of any one of these conditions may result in  
permanent damage to the device.  
2. Ground lead temperature is 25°C. Derate 20 mW/°C for Tc > 131.5  
°C.  
3. Thermal Resistance is measured from junction to board using IR  
method.  
Table 2. Electrical Specifications at Tc = +25°C  
Symbol  
Vd  
Parameter and Test Condition:Id = 60mA, Zo = 50  
W
Frequency  
Units  
Min.  
3.3  
Typ.  
Max.  
4.3  
Device Voltage  
V
3.8  
Gp  
Power Gain  
100 MHz  
dB  
15  
16.9  
16.5  
16.2  
18  
900 MHz [1,2]  
2.0 GHz  
Gp  
Gain Flatness  
100 to 900 MHz  
0.1 to 2.0 GHz  
dB  
0.3  
0.5  
F3dB  
3dB Bandwidth  
GHz  
4
VSWRin  
VSWRout  
NF  
Input Voltage Standing Wave Ratio  
Output Voltage Standing Wave Ratio  
50W Noise Figure  
0.1 to 4.0 GHz  
0.1 to 4.0 GHz  
1.3:1  
1.5:1  
100 MHz  
dB  
4.1  
4.2  
4.4  
900 MHz [1,2]  
2.0 GHz  
P1dB  
OIP3  
Output Power at 1dB Gain Compression  
Output Third Order Intercept Point  
Device Voltage Temperature Coefficient  
100 MHz  
dBm  
dBm  
mV/0C  
16.0  
27  
17.7  
17.1  
16.2  
900 MHz [1,2]  
2.0 GHz  
100 MHz [3]  
900 MHz [1,2,3]  
2.0 GHz [3]  
33.4  
32.6  
28.8  
dV/dT  
Notes:  
-4.9  
1. Typical value determined from a sample size of 500 parts from 3 wafers.  
2. Measurement obtained using production test board described in the block diagram below.  
3. i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.  
ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.  
iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.  
2

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