[1]
Table 1. Absolute Maximum Ratings at Tc = +25°C
Typical Biasing Configuration
Symbol
Id
Parameter
Unit
MaxRating
VCC =5 V
VCC - V d
RC
=
Device Current
mA
90
Id
R
C
c
bypass
Pdiss
Pin max
Tj
Total Power Dissipation[2] mW
370
RF Input Power
dBm
0C
0C
20
RFC
Junction Temperature
Storage Temperature
Thermal Resistance[3]
150
C
block
Tstg
qjc
-65 to 150
50
RF
input
3Tx
RF
output
0C/W
V
d = 3.8 V
C
block
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. Ground lead temperature is 25°C. Derate 20 mW/°C for Tc > 131.5
°C.
3. Thermal Resistance is measured from junction to board using IR
method.
Table 2. Electrical Specifications at Tc = +25°C
Symbol
Vd
Parameter and Test Condition:Id = 60mA, Zo = 50
W
Frequency
Units
Min.
3.3
Typ.
Max.
4.3
Device Voltage
V
3.8
Gp
Power Gain
100 MHz
dB
15
16.9
16.5
16.2
18
900 MHz [1,2]
2.0 GHz
Gp
Gain Flatness
100 to 900 MHz
0.1 to 2.0 GHz
dB
0.3
0.5
F3dB
3dB Bandwidth
GHz
4
VSWRin
VSWRout
NF
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50W Noise Figure
0.1 to 4.0 GHz
0.1 to 4.0 GHz
1.3:1
1.5:1
100 MHz
dB
4.1
4.2
4.4
900 MHz [1,2]
2.0 GHz
P1dB
OIP3
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Device Voltage Temperature Coefficient
100 MHz
dBm
dBm
mV/0C
16.0
27
17.7
17.1
16.2
900 MHz [1,2]
2.0 GHz
100 MHz [3]
900 MHz [1,2,3]
2.0 GHz [3]
33.4
32.6
28.8
dV/dT
Notes:
-4.9
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone.
ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone.
iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone.
2