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AD8236ARMZ-RL1 PDF预览

AD8236ARMZ-RL1

更新时间: 2022-05-24 12:28:28
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亚德诺 - ADI 仪表放大器
页数 文件大小 规格书
20页 514K
描述
40 μA Micropower Instrumentation Amplifier with Zero Crossover Distortion

AD8236ARMZ-RL1 数据手册

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AD8236  
ABSOLUTE MAXIMUM RATINGS  
Table 4.  
Parameter  
The difference between the total drive power and the load power is  
the drive power dissipated in the package.  
Rating  
Supply Voltage  
Power Dissipation  
6 V  
PD = Quiescent Power + (Total Drive Power Load Power)  
See Figure 3  
55 mA  
VS  
VS  
−65°C to +125°C  
−40°C to +125°C  
300°C  
2
VS VOUT  
VOUT  
RL  
Output Short-Circuit Current  
Input Voltage (Common Mode)  
Differential Input Voltage  
Storage Temperature Range  
Operating Temperature Range  
Lead Temperature (Soldering, 10 sec)  
Junction Temperature  
θJA (4-Layer JEDEC Standard Board)  
8-Lead MSOP  
PD =  
(
VS ×IS  
)
+
×
2
RL  
RMS output voltages should be considered. If RL is referenced to  
−VS, as in single-supply operation, the total drive power is VS ×  
IOUT. If the rms signal levels are indeterminate, consider the worst  
case, when VOUT = VS/4 for RL to midsupply  
140°C  
2
(
VS /4  
RL  
)
PD =  
(
VS ×IS +  
)
135°C/W  
140°C  
Package Glass Transition Temperature  
8-Lead MSOP  
ESD  
In single-supply operation with RL referenced to −VS, worst case  
is VOUT = VS/2.  
Airflow increases heat dissipation, effectively reducing θJA. In  
addition, more metal directly in contact with the package leads  
from metal traces, through holes, ground, and power planes  
reduces the θJA.  
Human Body Model  
Charge Device Model  
Machine Model  
2 kV  
1 kV  
200 V  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Figure 3 shows the maximum safe power dissipation in the package  
vs. the ambient temperature for the 8-lead MSOP on a 4-layer  
JEDEC standard board. θJA values are approximations.  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0
MAXIMUM POWER DISSIPATION  
The maximum safe power dissipation in the package of the  
AD8236 is limited by the associated rise in junction temperature  
(TJ) on the die. The plastic encapsulating the die locally reaches  
the junction temperature. At approximately 140°C, which is the  
glass transition temperature, the plastic changes its properties.  
Even temporarily exceeding this temperature limit may change  
the stresses that the package exerts on the die, permanently  
shifting the parametric performance of the AD8236.  
–40  
–20  
0
20  
40  
60  
80  
100  
120  
AMBIENT TEMPERATURE (°C)  
The still-air thermal properties of the package and PCB (θJA),  
the ambient temperature (TA), and the total power dissipated in  
the package (PD) determine the junction temperature of the die.  
The junction temperature is calculated as  
Figure 3. Maximum Power Dissipation vs. Ambient Temperature  
ESD CAUTION  
TJ = TA + (PD × θJA)  
The power dissipated in the package (PD) is the sum of the  
quiescent power dissipation and the power dissipated in the  
package due to the load drive for all outputs. The quiescent  
power is the voltage between the supply pins (VS) times the  
quiescent current (IS). Assuming the load (RL) is referenced to  
midsupply, the total drive power is VS/2 × IOUT, some of which  
is dissipated in the package and some in the load (VOUT × IOUT).  
Rev. 0 | Page 7 of 20  
 
 

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