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AD8220TRMZ-EP PDF预览

AD8220TRMZ-EP

更新时间: 2024-02-20 00:44:32
品牌 Logo 应用领域
亚德诺 - ADI 放大器光电二极管
页数 文件大小 规格书
11页 316K
描述
JFET Input Instrumentation Amplifier with Rail-to-Rail Output in MSOP Package

AD8220TRMZ-EP 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSSOP,
针数:8Reach Compliance Code:compliant
风险等级:2.24放大器类型:INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB):0.1 µA标称带宽 (3dB):1.5 MHz
最小共模抑制比:77 dB最大输入失调电流 (IIO):0.01 µA
最大输入失调电压:250 µVJESD-30 代码:S-PDSO-G8
长度:3 mm湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
最大非线性:0.05%功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:1.1 mm子类别:Instrumentation Amplifier
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES温度等级:MILITARY
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压增益:1000最小电压增益:1
标称电压增益:10宽度:3 mm
Base Number Matches:1

AD8220TRMZ-EP 数据手册

 浏览型号AD8220TRMZ-EP的Datasheet PDF文件第1页浏览型号AD8220TRMZ-EP的Datasheet PDF文件第2页浏览型号AD8220TRMZ-EP的Datasheet PDF文件第4页浏览型号AD8220TRMZ-EP的Datasheet PDF文件第5页浏览型号AD8220TRMZ-EP的Datasheet PDF文件第6页浏览型号AD8220TRMZ-EP的Datasheet PDF文件第7页 
Enhanced Product  
AD8220-EP  
SPECIFICATIONS  
+VS = 15 V, VS = −15 V, V REF = 0 V, TA = 25°C, TOPR = −55°C to +125°C, G = 1, RL = 2 kΩ,1 unless otherwise noted.  
Table 1.  
Parameter  
Test Conditions/Comments  
Min  
Typ  
Max  
Unit  
COMMON-MODE REJECTION RATIO (CMRR)  
TOPR  
CMRR from DC to 60 Hz with 1 kΩ Source  
Imbalance  
VCM = 10 V  
G = 1  
G = 10  
G = 100  
G = 1000  
77  
92  
92  
92  
dB  
dB  
dB  
dB  
CMRR at 5 kHz  
G = 1  
G = 10  
G = 100  
G = 1000  
VCM = 10 V  
72  
80  
80  
80  
dB  
dB  
dB  
dB  
NOISE  
Referred to input (RTI) noise = √(eni2 + (eno/G)2), TA  
Voltage Noise, 1 kHz  
Input Voltage Noise, eni  
Output Voltage Noise, eno  
RTI, 0.1 Hz to 10 Hz  
G = 1  
VIN+, VIN− = 0 V  
VIN+, VIN− = 0 V  
14  
90  
nV/√Hz  
nV/√Hz  
5
0.8  
1
µV p-p  
µV p-p  
fA/√Hz  
G = 1000  
Current Noise  
VOLTAGE OFFSET  
Input Offset, VOSI  
Average Temperature Coefficient (TC) TOPR  
Output Offset, VOSO  
Average TC  
f = 1 kHz  
VOS = VOSI + VOSO/G  
TA  
−250  
−10  
−750  
−10  
+250  
+10  
+750  
+10  
µV  
µV/°C  
µV  
TA  
TOPR  
µV/°C  
Offset RTI vs. Supply (PSR)  
G = 1  
G = 10  
G = 100  
G = 1000  
VS = 5 V to 15 V, TOPR  
80  
92  
92  
92  
dB  
dB  
dB  
dB  
INPUT CURRENT  
Input Bias Current  
Over Temperature  
Input Offset Current  
Over Temperature  
DYNAMIC RESPONSE  
Small Signal Bandwidth, −3 dB  
G = 1  
TA  
TOPR  
TA  
25  
100  
2
pA  
nA  
pA  
nA  
TOPR  
10  
TA  
1500  
800  
120  
14  
kHz  
kHz  
kHz  
kHz  
G = 10  
G = 100  
G = 1000  
Settling Time 0.01%  
G = 1  
G = 10  
G = 100  
G = 1000  
10 V step, TA  
5
µs  
µs  
µs  
µs  
4.3  
8.1  
58  
Rev. A | Page 3 of 11  
 

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