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AD8015AR-REEL7 PDF预览

AD8015AR-REEL7

更新时间: 2024-01-22 05:40:08
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 光电二极管
页数 文件大小 规格书
9页 834K
描述
SPECIALTY TELECOM CIRCUIT, PDSO8, PLASTIC, SOIC-8

AD8015AR-REEL7 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP,
针数:8Reach Compliance Code:unknown
风险等级:5.05JESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
认证状态:COMMERCIAL座面最大高度:1.75 mm
标称供电电压:5 V表面贴装:YES
电信集成电路类型:TELECOM CIRCUIT温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:3.9 mm
Base Number Matches:1

AD8015AR-REEL7 数据手册

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AD8015  
SO NET O C-3 SENSITIVITY ANALYSIS  
Sensitivity (minimum power level) = 492/0.85 nW  
= 579 nW (peak)  
OC-3 Minimum Bandwidth = 0.7 × 155 MHz 110 MHz  
Total Current Noise = (π/2) × 26.5 nA  
= –32.4 dBm (peak)  
= 42 nA (assuming single pole response)  
T o maintain a BER < 1 × 10–10 (1 error per 10 billion bits):  
= –35.4 dBm (average)  
T he FDDI specification allows for a minimum power level of  
–28 dBm peak, or –31 dBm average. Using the AD8015 pro-  
vides 4.4 dB margin.  
Minimum current level needs to be > 13 × Total Current Noise  
= 541 nA (peak)  
Assume a typical photodiode current/power conversion ratio  
TH EO RY O F O P ERATIO N  
= 0.85 A/W  
T he simplified schematic is shown in Figure 5. Q1 and Q3 make  
up the input stage, with Q3 running at 300 µA and Q1 running  
at 2.7 mA. Q3 runs essentially as a grounded emitter. A large  
capacitor (0.01 µF) placed from VBYP to the positive supply  
shorts out the noise of R17, R21, and Q16. T he first stage of the  
amplifier (Q3, R2, Q4, and C1) functions as an integrator, inte-  
grating current into the IIN pin. T he integrator drives a differen-  
tial stage (Q5, Q6, R5, R3, and R4) with gains of +3 and –3.  
T he differential stage then drives emitter followers (Q41, Q42,  
Q60 and Q61). T he positive output of the differential stage pro-  
vides the feedback by driving RFB. T he differential outputs are  
buffered using Q7 and Q8.  
Sensitivity (minimum power level) = 541/0.85 nW  
= 637 nW (peak)  
= –32.0 dBm (peak)  
= –35.0 dBm (average)  
T he SONET OC-3 specification allows for a minimum power  
level of –31 dBm peak, or –34 dBm average. Using the AD8015  
provides 1 dB margin.  
FD D I SENSITIVITY ANALYSIS  
FDDI Minimum Bandwidth = 0.7 × 125 MHz 88 MHz  
T he bandwidth of the AD8015 is set to within +20% of the  
nominal value, 240 MHz, by factory trimming R5 to 60 . T he  
following formula describes the AD8015 bandwidth:  
88 MHz  
Total Current Noise = (π / 2) ×  
× 26.5 nA  
100 MHz  
Bandwidth = 1/(2 π × C1 × RFB × (R5 + 2 re)/R4)  
= 39 nA (assuming single pole response)  
where re (of Q5 and Q6) = 9 each, constant over temperature,  
and RFB/R4 = 43.5, constant over temperature.  
T o maintain a BER < 2.5 × 10–10 (1 error per 4 billion bits):  
T he bandwidth equation simplifies, and the bandwidth depends  
only on the value of C1:  
Minimum current level needs to be > 12.6 × Total Current Noise  
= 492 nA (peak)  
Bandwidth = 1/(2 π × 3393 × C1).  
Assume a typical photodiode current/power conversion ratio  
= 0.85 A/W  
+VS  
R17  
635  
R1  
300  
R2  
3k  
R3  
230  
R4  
230  
330  
Q4  
Q42  
R21  
1.8k  
Q41  
INPUT  
CLAMPS  
+OUTPUT  
Q8  
Q16  
R44 50  
Q7  
Q60  
V
I
Q3  
Q1  
BYP  
IN  
Q5  
Q6  
C1 0.2pF  
330  
+V  
S
–OUTPUT  
R5 60  
R43 50  
I10  
Q61  
0.75MA  
Q56  
RFB  
10k  
I5  
I2  
3MA  
I3  
1MA  
I4  
3MA  
I6  
1MA  
I7  
1MA  
I8  
1MA  
I9  
1MA  
I1  
1.5MA  
3MA  
–VS  
Figure 5. AD8015 Sim plified Schem atiic  
–4–  
REV. A  

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