Datasheet > AD10N10S-Q1

AD10N10S-Q1

更新时间： 2024-09-24 18:07:07

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
6页	1895K
描述
TO-252AB

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数据手册

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AD10N10S-Q1 数据手册

AD10N10S-Q1

N-Channel Enhancement Mode Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

130mΩ@10V

140mΩ@4.5V

100V

10A

Feature

Application

High density cell design for ultra low Rdson

Power switching application

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Suffix "-Q1" for AEC-Q101

Hard switched and high frequency circuits

Uninterruptible power supply

Package

Circuit diagram

TO-252AB

Marking

D10N10

XXXXX

Document ID

AS-1150072

Issued Date

2018/03/08

Revised Date

2012/05/16

Revision

Page.

Page 1

12 3 4 5 6

中文翻译

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