Characteristics
ASCT4
Figure 4.
On-state rms current versus
ambient temperature (free air
convection, full cycle)
Figure 5.
Relative variation of thermal
impedance versus pulse duration
K = [Z / R
]
I
(A)
th
th
T(RMS)
1.0E+00
2.0
1.5
Zth(j-c)
α=180°
DPAK
TO-220FPAB
Zth(j-a)
DPAK with copper
surface = 0.5 cm2
TO-220FPAB
1.0E-01
1.0
0.5
0.0
T
(s)
T (°C)
p
a
1.0E-02
1.0E-03
0
25
50
75
100
125
1.0E-02
1.0E-01
1.0E+00 1.0E+01
1.0E+02 1.0E+03
Figure 6.
Relative variation of gate trigger
Figure 7.
Relative variation of holding
current (I ) and voltage (V
)
current (I ) and latching current (I )
GT
GT
H
L
versus junction temperature
versus junction temperature
I
, I [T ] / I , I [T = 25 °C]
I
, V [T ] / I , V [T = 25 °C]
H
L
j
H
L
j
GT GT
j
GT GT j
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
(typical values)
(typical values)
I
Q3
GT
I
Q1-Q2
GT
VGT Q1-Q2-Q3
I
L
I
H
T (°C)
j
T (°C)
j
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
Figure 8.
Surge peak on-state current
versus number of cycles
Figure 9.
Non repetitive surge peak on-state
current and corresponding value of
I t versus sinusoidal pulse width
2
I
(A)
I
(A), I²t (A²s)
TSM
TSM
35
30
25
20
15
10
5
1000
100
10
dl /dt limitation: 100 A / µs
T initial = 25 °C
j
t=20ms
One cycle
Non repetitive
Tj initial=25 °C
I
TSM
I²t
Repetitive
TC=102°C
Number of cycles
1000
tp (ms)
1
0
0.01
0.10
1.00
10.00
1
10
100
4/13
Doc ID 8766 Rev 5