Datasheet > ACST4358B

ACST4358B

更新时间： 2022-12-21 11:48:58

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		开关
页数	文件大小	规格书
13页	159K
描述
Overvoltage protected AC switch

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数据手册

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ACST4358B 数据手册

Characteristics

ASCT4

Characteristics

Table 2.

Symbol

Absolute ratings (limiting values)

Parameter

Value

Unit

TO-220FPAB

DPAK

T_c= 102 °C

T_c= 112 °C

I_T(RMS)On-state rms current (full sine wave)

DPAK with

0.5 cm²copper

T_amb= 60 °C

F = 60 Hz

F = 50 Hz

t_p= 16.7 ms

t_p= 20 ms

t_p= 10 ms

Non repetitive surge peak on-state current

I_TSM

T_jinitial = 25 °C, ( full cycle sine wave)

I²t

I²t for fuse selection

A²s

Critical rate of rise on-state current

I_G= 2 x I_GT,(t_r≤ 100 ns)

Non repetitive line peak pulse voltage ⁽¹⁾

dI/dt

V_PP

F = 120 Hz

T_j= 125 °C

100

A/µs

T_j= 25 °C

T_j= 125 °C

0.1

P_G(AV)Average gate power dissipation

P_GM

Peak gate power dissipation (t_p= 20 µs)

Peak gate current (t_p= 20 µs)

I_GM

1.6

T_stg

Storage temperature range

-40 to +150

-40 to +125

260

°C

T_j

Operating junction temperature range

T_l

Maximum lead solder temperature during 10 ms (at 3 mm from plastic case)

TO-220FPAB

V_INS(RMS)Insulation rms voltage

1500

1. According to test described in IEC 61000-4-5 standard and Figure 19.

Table 3.

Symbol

Electrical characteristics

Test conditions

Quadrant

I - II - III

T_j

ACST410 ACST435

Unit

(1)

I_GT

V_OUT= 12 V, R_L= 33 Ω

V_OUT= V_DRM, R_L= 3.3 kΩ

I_OUT= 500 mA

25 °C

MAX.

MIN.

MAX.

MIN.

V_GT

V_GD

I - II - III

1.0

1.1

125 °C

25 °C

0.2

(2)

I_H

V/µs

A/ms

I_L

I_G= 1.2 x I_GT

I - II - III

25 °C

dV/dt ⁽²⁾V_OUT= 67 % V_DRM, gate open

125 °C

25 °C

500

1000

(2)

(dI/dt)_c

V_CL

Without snubber

(2)

(dV/dt)_c= 15 V/µs

I_CL= 0.1 mA, t_p= 1 ms

MIN.

850

1. Minimum I_GTis guaranteed at 5% of I_GTmax

2. For both polarities of OUT pin referenced to COM pin

2/13

Doc ID 8766 Rev 5

123 4 5 6 7...13

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