Datasheet > ACS21MS

ACS21MS

更新时间： 2022-11-29 04:04:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		栅
页数	文件大小	规格书
2页	41K
描述
Radiation Hardened Dual 4-Input AND Gate

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ACS21MS

Die Characteristics

DIE DIMENSIONS:

PASSIVATION:

Size: 2390µm x 2390µm (94 mils x 94 mils)

Thickness: 525µm ±25µm (20.6 mils ±1 mil)

Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)

Type: Phosphorous Silicon Glass (PSG)

Thickness: 1.30µm ±0.15µm

SPECIAL INSTRUCTIONS

METALLIZATION: AI

Bond V

First

ADDITIONAL INFORMATION:

Metal 1 Thickness: 0.7µm ±0.1µm

Metal 2 Thickness: 1.0µm ±0.1µm

Worst Case Current Density: <2.0 x 10 A/cm

Transistor Count: 92

SUBSTRATE POTENTIAL

Unbiased Insulator

Metallization Mask Layout

ACS21MS

(2)

(1)

(13)

(14)

(12) C2

C1 (4)

(10) B2

D1 (5)

(6)

(7)

(8)

(9)

GND

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