Datasheet > AC847CQ

AC847CQ

更新时间： 2023-09-24 09:17:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	333K
描述
NPN, 50V, 0.1A, SOT23

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AC847CQ 数据手册

AC847BQ-AC847CQ

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Symbol

BV_CBO

BV_CEO

BV_EBO

Min

Typ

—

Max

—

Unit

Test Condition

I_C= 10µA

Collector-Emitter Breakdown Voltage (Note 10)

Emitter-Base Breakdown Voltage

—

I_C= 10mA

—

I_E= 1µA

µA

V_CB= 30V

Collector Cutoff Current

—

I_CBO

V_CB= 30V, TJ = +150°C

V_CE= 50V

Collector Emitter Cutoff Current

Emitter Base Cutoff Current

—

100

I_CES

I_EBO

V_EB= 5V

AC847BQ

AC847CQ

AC847BQ

AC847CQ

AC847BQ

AC847CQ

AC847BQ

AC847CQ

AC847BQ

AC847CQ

330

600

4.5

8.7

Small Signal Current Gain (Note 10)

Input Impedance (Note 10)

—

kΩ

µs

—

I_C= 2.0mA, V_CE= 5V

f=1.0kHz

Output Admittance (Note 10)

2x10^-4

3x10^-4

290

520

Reverse Voltage Transfer Ratio (Note 10)

DC Current Gain (Note 10)

200

420

450

800

250

600

700

770

—

h_FE

I_C= 2.0mA, V_CE= 5V

I_C= 10mA, I_B= 0.5mA

I_C= 100mA, I_B= 5.0mA

I_C= 2mA, V_CE= 5V

Collector-Emitter Saturation Voltage (Note 10)

—

V_CE(SAT)

V_BE(ON)

200

580

660

—

Base-Emitter Turn-On Voltage(Note 10)

—

I_C= 10mA, V_CE= 5V

I_C= 10mA, I_B= 0.5mA

I_C= 100mA, I_B= 5mA

V_CB= 10V, f = 1.0MHz

700

900

Base-Emitter Saturation Voltage(Note 10)

Output Capacitance

—

V_BE(SAT)

C_OBO

f_T

V_CE= 5V, I_C= 10mA,

f = 100MHz

Transition Frequency

100

300

MHz

V_CE=5V, I_C=200µA

R_S=2kΩ, f=1kHz

∆f=200Hz

Noise Figure

—

Note:

10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

4 of 7

www.diodes.com

May 2017

AC847BQ-AC847CQ

Document number: DS39448 Rev. 1 - 2

1 2 345 6 7

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