Datasheet > 存储 > 闪存> AB28F200BX-T90

AB28F200BX-T90

更新时间： 2024-01-06 19:32:40

品牌	Logo	应用领域
英特尔 - INTEL		闪存内存集成电路光电二极管
页数	文件大小	规格书
33页	459K
描述
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

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技术参数
数据手册

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AB28F200BX-T90 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	1.110 X 0.525 INCH, PLASTIC, SOP-44	针数：	44
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.77
Is Samacsys：	N	最长访问时间：	90 ns
其他特性：	TOP BOOT BLOCK	备用内存宽度：	8
启动块：	TOP	命令用户界面：	YES
数据轮询：	NO	JESD-30 代码：	R-PDSO-G44
长度：	28.2 mm	内存密度：	2097152 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,1
端子数量：	44	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	125 °C	最低工作温度：	-40 °C
组织：	128KX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP44,.63	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	PARALLEL
电源：	5 V	编程电压：	12 V
认证状态：	Not Qualified	座面最大高度：	2.95 mm
部门规模：	16K,8K,96K,128K	最大待机电流：	0.00008 A
子类别：	Flash Memories	最大压摆率：	0.065 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	MOS	温度等级：	AUTOMOTIVE
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	切换位：	NO
类型：	NOR TYPE	宽度：	13.3 mm
Base Number Matches：	1

AB28F200BX-T90 数据手册

A28F200BX-T/B

Program and Erase Automation allows program

and erase operations to be executed using a two-

write command sequence to the CUI. The internal

Write State Machine (WSM) automatically executes

the algorithms and timings necessary for program

and erase operations, including verifications, there-

by unburdening the microprocessor or microcontrol-

ler. Writing of memory data is performed in word or

byte increments for the A28F200BX family typically

within 9 ms which is a 100% improvement over pre-

vious flash memory products.

1.0 PRODUCT FAMILY OVERVIEW

Throughout this datasheet the A28F200BX refers to

both the A28F200BX-T and A28F200BX-B devices.

Section 1 provides an overview of the 2-Mbit flash

memory family including applications, pinouts and

pin descriptions. Section 2 describes in detail the

specific memory organization. Section 3 provides a

description of the family’s principles of operation. Fi-

nally, the family’s operating specifications are de-

scribed.

The Status Register (SR) indicates the status of the

WSM and whether the WSM successfully completed

the desired program or erase operation.

1.1 Main Features

The A28F200BX boot block flash memory family is a

very high performance 2-Mbit (2,097,152 bit) memo-

ry family organized as either 128-KWords (131,072

words) of 16 bits each or 256-Kbytes (262,144

bytes) of 8 bits each.

Maximum Access Time of 90 ns (TACC) is achieved

over the automotive temperature range ( 40 C to

supply voltage range and 100 pF

125 C), 10% V

output load.

I maximum Program current is 40 mA for x16

Five Separately Erasable Blocks including a hard-

ware-lockable boot block (16,384 Bytes), two pa-

rameter blocks (8,192 Bytes each) and two main

blocks (1 block of 98,304 Bytes and 1 block of

131,072 Bytes) are included on the 2-Mbit family. An

erase operation erases one of the main blocks in

typically 3 seconds, and the boot or parameter

blocks in typically 1.5 seconds. Each block can be

independently erased and programmed 1,000 times.

operation and 30 mA for x8 operation. I Erase

current is 30 mA maximum. V erase and pro-

gramming voltage is 11.4V to 12.6V (V

Active Current of 25 mA is achieved.

5%) under all operating conditions. Typical I

12V

The 2-Mbit boot block flash family is also designed

with an Automatic Power Savings (APS) feature to

minimize system battery current drain and allow for

very low power designs. Once the device is ac-

cessed to read array data, APS mode will immedi-

ately put the memory in static mode of operation

The Boot Block is located at either the top

(A28F200BX-T) or the bottom (A28F200BX-B) of the

address map in order to accommodate different mi-

croprocessor protocols for boot code location. The

hardware lockable boot block provides the most

secure code storage. The boot block is intended to

store the kernel code required for booting-up a sys-

where I

next read is initiated.

active current is typically 1 mA until the

When the CE and RP pins are at V

BYTE pin is at either V

and the

or GND the CMOS

tem. When the RP pin is between 11.4V and 12.6V

the boot block is unlocked and program and erase

Standby mode is enabled where I

80 mA.

is typically

operations can be performed. When the RP pin is

at or below 6.5V the boot block is locked and pro-

gram and erase operations to the boot block are

ignored.

A Deep Power-Down Mode is enabled when the

RP pin is at ground minimizing power consumption

and providing write protection during power-up con-

The A28F200BX products are available in the ROM/

EPROM compatible pinout and housed in the

44-Lead PSOP (Plastic Small Outline) package as

shown in Figure 3.

ditions. I

current during deep power-down mode

is 50 mA typical. An initial maximum access time or

Reset Time of 300 ns is required from RP switch-

ing until outputs are valid. Equivalently, the device

has a maximum wake-up time of 210 ns until writes

to the Command User Interface are recognized.

The Command User Interface (CUI) serves as the

interface between the microprocessor or microcon-

troller and the internal operation of the A28F200BX

flash memory.

1 234 5 6 7...33

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与AB28F200BX-T90相关器件

型号	品牌	获取价格	描述	数据表
AB28F400B5B80	INTEL	获取价格	5 VOLT BOOT BLOCK FLASH MEMORY
AB28F400B5T80	INTEL	获取价格	5 VOLT BOOT BLOCK FLASH MEMORY
AB28F400BR-B80	NUMONYX	获取价格	Flash, 512KX8, 80ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28F400BR-B80	INTEL	获取价格	Flash, 512KX8, 80ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28F400BR-T80	NUMONYX	获取价格	Flash, 512KX8, 80ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28F400BR-T80	INTEL	获取价格	Flash, 512KX8, 80ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28F400BX-B90	INTEL	获取价格	4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY
AB28F400BX-T90	INTEL	获取价格	4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY
AB28F800B5B80	INTEL	获取价格	5 VOLT BOOT BLOCK FLASH MEMORY
AB28F800B5B90	INTEL	获取价格	5 VOLT BOOT BLOCK FLASH MEMORY

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