5秒后页面跳转
A800DT12PD PDF预览

A800DT12PD

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
超微 - AMD 闪存
页数 文件大小 规格书
46页 1066K
描述
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

A800DT12PD 数据手册

 浏览型号A800DT12PD的Datasheet PDF文件第7页浏览型号A800DT12PD的Datasheet PDF文件第8页浏览型号A800DT12PD的Datasheet PDF文件第9页浏览型号A800DT12PD的Datasheet PDF文件第11页浏览型号A800DT12PD的Datasheet PDF文件第12页浏览型号A800DT12PD的Datasheet PDF文件第13页 
D A T A S H E E T  
tion needed to execute the command. The contents of  
DEVICE BUS OPERATIONS  
the register serve as inputs to the internal state  
machine. The state machine outputs dictate the func-  
tion of the device. Table 1 lists the device bus  
operations, the inputs and control levels they require,  
and the resulting output. The following subsections  
describe each of these operations in further detail.  
This section describes the requirements and use of the  
device bus operations, which are initiated through the  
internal command register. The command register  
itself does not occupy any addressable memory loca-  
tion. The register is composed of latches that store the  
commands, along with the address and data informa-  
Table 1. Am29SL800D Device Bus Operations  
DQ8–DQ15  
BYTE#  
Addresses  
(Note 1)  
DQ0–  
DQ7  
BYTE#  
= VIH  
Operation  
CE#  
L
OE# WE# RESET#  
= VIL  
Read  
Write  
L
H
L
H
H
AIN  
AIN  
DOUT  
DIN  
DOUT  
DIN  
DQ8–DQ14 = High-Z,  
DQ15 = A-1  
L
H
VCC  
0.2 V  
±
VCC ±  
0.2 V  
Standby  
X
X
X
High-Z  
High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
X
Sector Address, A6 =  
L, A1 = H,  
Sector Protect (Note)  
L
H
L
VID  
DIN  
X
X
A0 = L  
Sector Address, A6 =  
H, A1 = H,  
Sector Unprotect (Note)  
L
H
X
L
VID  
VID  
DIN  
DIN  
X
X
A0 = L  
Temporary Sector Unprotect  
X
X
AIN  
DIN  
High-Z  
Legend:  
L = Logic Low = VIL, H = Logic High = VIH, VID = 10 ± 1.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out  
Notes:  
1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL).  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment.  
ensures that no spurious alteration of the memory  
Word/Byte Configuration  
content occurs during the power transition. No  
The BYTE# pin controls whether the device data I/O  
command is necessary in this mode to obtain array  
pins DQ15–DQ0 operate in the byte or word configura-  
data. Standard microprocessor read cycles that assert  
tion. If the BYTE# pin is set at logic ‘1’, the device is in  
valid addresses on the device address inputs produce  
word configuration, DQ15–DQ0 are active and con-  
valid data on the device data outputs. The device  
trolled by CE# and OE#.  
remains enabled for read access until the command  
If the BYTE# pin is set at logic ‘0’, the device is in byte  
configuration, and only data I/O pins DQ0–DQ7 are  
active and controlled by CE# and OE#. The data I/O  
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is  
used as an input for the LSB (A-1) address function.  
register contents are altered.  
See Reading Array Data‚ on page 14 for more informa-  
tion. Refer to the AC Read Operations table for timing  
specifications and to Figure 13, on page 28 for the  
timing diagram. I  
in the DC Characteristics table  
CC1  
represents the active current specification for reading  
array data.  
Requirements for Reading Array Data  
To read array data from the outputs, the system must  
drive the CE# and OE# pins to V . CE# is the power  
control and selects the device. OE# is the output  
control and gates array data to the output pins. WE#  
Writing Commands/Command Sequences  
To write a command or command sequence (which  
includes programming data to the device and erasing  
sectors of memory), the system must drive WE# and  
IL  
should remain at V . The BYTE# pin determines  
IH  
whether the device outputs array data in words or  
bytes.  
CE# to V , and OE# to V .  
IL  
IH  
For program operations, the BYTE# pin determines  
whether the device accepts program data in bytes or  
The internal state machine is set for reading array data  
upon device power-up, or after a hardware reset. This  
8
Am29SL800D  
27546A6 January 23, 2007  

与A800DT12PD相关器件

型号 品牌 描述 获取价格 数据表
A800DT12PF AMD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

获取价格

A800DT12PI AMD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

获取价格

A800DT12UC AMD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

获取价格

A800DT12UD AMD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

获取价格

A800DT12UF AMD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

获取价格

A800DT12UI AMD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

获取价格