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A625308-L PDF预览

A625308-L

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
联笙电子 - AMICC 静态存储器
页数 文件大小 规格书
13页 126K
描述
32K X 8 BIT CMOS SRAM

A625308-L 数据手册

 浏览型号A625308-L的Datasheet PDF文件第6页浏览型号A625308-L的Datasheet PDF文件第7页浏览型号A625308-L的Datasheet PDF文件第8页浏览型号A625308-L的Datasheet PDF文件第10页浏览型号A625308-L的Datasheet PDF文件第11页浏览型号A625308-L的Datasheet PDF文件第12页 
A625308 Series  
Timing Waveforms (continued)  
Write Cycle 2 (6)  
(Chip Enable Controlled)  
tWC  
Address  
3
tAW  
tWR  
5
tCW  
CE  
(4)  
1
tAS  
2
tWP  
WE  
tDW  
tDH  
DIN  
7
tWHZ  
DOUT  
Notes: 1. tAS is measured from the address valid to the beginning of Write.  
2. A Write occurs during the overlap (tWP) of a low CE and a low WE .  
3. tWR is measured from the earliest of CE or WE going high to the end of the Write cycle.  
4. If the CE low transition occurs simultaneously with the WE low transition or after the WE transition, outputs  
remain in a high impedance state.  
5. tCW is measured from the later of CE going low to the end of Write.  
6. OE level is high or low.  
7. Transition is measured ±500mV from steady. This parameter is sampled and not 100% tested.  
PRELIMINARY  
(December, 2000, Version 0.2)  
8
AMIC Technology, Inc.  

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