A61L6316V-15I

更新时间： 2024-01-07 14:47:32

品牌	Logo	应用领域
联笙电子 - AMICC		静态存储器
页数	文件大小	规格书
15页	149K
描述
64K X 16 BIT HIGH SPEED CMOS SRAM

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A61L6316V-15I 数据手册

A61L6316 Series

Absolute Maximum Ratings*

*Comments

VCC to GND . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V

IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V

Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . 0°C to +70°C or -25°C to +85°C

Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C

Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W

Soldering Temp. & Time . . . . . . . . . . . . . 260°C, 10 sec

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification

is not implied or intended. Exposure to the absolute

maximum rating conditions for extended periods may

affect device reliability.

DC Electrical Characteristics (TA = 0°C to + 70°C or -25°C to +85°C, -10: 3.3V+10%, -5%; -12, -15: 3.3V±10%)

A61L6316-10 A61L6316-12

A61L6316-15

Symbol

Parameter

Unit

Conditions

Min.

Max.

Min.

Max.

Min.

Max.

Input Leakage

VIN = GND to VCC

½ILI½

CE = VIH, OE = VIH

VI/O = GND to VCC

Output Leakage

½ILO½

CE = VIL, II/O = 0 mA

Min. Cycle, Duty = 100%

ICC1 (2)

ISB

Dynamic Operating

Current

230

220

210

CE = VIH

Standby Power

Supply Current

CE ³ VCC - 0.2V,

VIN ³ VCC -0.2V or

VIN £ 0.2V

ISB1

VOL

VOH

Output Low Voltage

Output High Voltage

0.4

IOL = 8 mA

2.4

IOH = -4 mA

Notes: 1. VIL = -3.0V for pulses less than 20 ns.

2. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.

(July, 2002, Version 1.1)

AMIC Technology, Inc.

1 2 3 456 7 8...15

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